HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
...
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
11
Typical Applications
This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop
Functional Diagram
Features
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
General Description
The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifier can also oper...
