POWER AMPLIFIER. HMC413QS16GE Datasheet

HMC413QS16GE AMPLIFIER. Datasheet pdf. Equivalent

Part HMC413QS16GE
Description GaAs InGaP HBT MMIC POWER AMPLIFIER
Feature HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz LINEAR & POWE.
Manufacture Analog Devices
Datasheet
Download HMC413QS16GE Datasheet





HMC413QS16GE
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
11
Typical Applications
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Functional Diagram
Features
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
General Description
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
11 - 50
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Parameter
Frequency
Min.
Vs= 3.6V
Typ.
Max.
Min.
Vs= 5V
Typ.
Gain
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19 22
20 23
19 22
18 21
Gain Variation Over Temperature
1.6 - 2.2 GHz
0.025
0.035
0.025
Input Return Loss
1.6 - 2.2 GHz
10
10
Output Return Loss
1.6 - 2.2 GHz
8
9
Output Power for 1 dB Compression (P1dB)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23 26
24 27
Saturated Output Power (Psat)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
Output Third Order Intercept (IP3)
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36 39
37 40
36 39
Noise Figure
1.6 - 2.2 GHz
5.5
5.5
Supply Current (Icq)
Vpd= 0V/3.6V
0.002/220
0.002/270
Control Current (Ipd)
Vpd= 3.6V
77
Switching Speed
tON, tOFF
80 80
Max.
0.035
Units
dB
dB
dB
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
mA
ns
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HMC413QS16GE
HMC413* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC413QS16G Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC413 Data Sheet
TOOLS AND SIMULATIONS
HMC413 S-Parameter
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: QS##, QS##E and QS##G,QS##GE
packages - Relocation of pre-existing production
equipment to new building
Package/Assembly Qualification Test Report: Plastic
Encapsulated QSOP (QTR: 02015 REV: 11)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC413 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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