HMC7229LS6

Data Sheet GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz HMC7229LS6 FEATURES 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package APPLICATIONS Point to point radios Point to multipoint radios Very small aperture terminal (VSAT) and satellite communications (SATCOM) FUNCTIONAL BLOCK DIAGRAM HMC7229LS6 16 VREF 15 GND 14 RFOUT 13 GND 12 VDET VDD1 1 VDD3 2 VGG1 3 11 VDD2 10 VDD4 9 VGG2 NIC 4 GND 5 RFIN 6 GND 7 NIC 8 13337-001 GENERAL DESCRIPTION The HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz. The HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated output power at 18% PAE at 39 GHz from a 6 V supply. With an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear PACKAGE BASE GND NOTES 1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA SHOWN HEREIN WAS MEASURED WITH THESE PINS EXTERNALLY CONNECTED TO RF/DC GROUND. Figure 1. applications such as high capacity, point to point or multipoint radios or VSAT/SATCOM applications demanding 32 dBm of efficient sa...