DIGITAL ATTENUATOR. HMC306MS10E Datasheet

HMC306MS10E ATTENUATOR. Datasheet pdf. Equivalent

HMC306MS10E Datasheet
Recommendation HMC306MS10E Datasheet
Part HMC306MS10E
Description 0.5dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR
Feature HMC306MS10E; ATTENUATORS - SMT OBSOLETE HMC306MS10 / 306MS10E v06.0206 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATT.
Manufacture Analog Devices
Datasheet
Download HMC306MS10E Datasheet




Analog Devices HMC306MS10E
HMC306MS10 / 306MS10E
v06.0206
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.7 - 3.8 GHz
5
Typical Applications
The HMC306MS10 / HMC306MS10E is ideal for:
• Cellular; UMTS/3G Infrastructure
• ISM, MMDS, WLAN, WiMAX
• Microwave Radio & VSAT
• Test Equipment and Sensors
Features
RoHS-Compliant Product
0.5 dB LSB Steps to 15.5 dB
Single Positive Control Per Bit
± 0.2 dB Typical Bit Error
Miniature 15 mm2 Package: MSOP10
Included in the HMC-DK004 Designer’s Kit
Functional Diagram
General Description
The HMC306MS10 & HMC306MS10E are general
purpose broadband 5-bit positive control GaAs IC
digital attenuators in 10 lead MSOP surface mount
plastic packages. Covering 0.7 to 3.8 GHz, the
insertion loss is typically less than 1.5 to 2.3 dB.
These attenuators’ bit values are 0.5 (LSB), 1, 2, 4 and
8 dB for a total attenuation of 15.5 dB. Attenuation
accuracy is excellent at ± 0.2 dB typical with an IIP3
of up to +52 dBm. Five bit control voltage inputs, toggled
between 0 and +3 to +5V, are used to select each
attenuation state. A single Vdd bias of +3 to +5V ap-
plied through an external 5K Ohm resistor is required.
5 - 60
Electrical Specifications,
TA = +25° C, Vdd= +3V to +5V & VCTL= 0/Vdd (Unless Otherwise Stated)
Parameter
Insertion Loss
Attenuation Range
Return Loss (RF1 & RF2, All Atten. States)
Frequency (GHz)
0.7 - 1.4
1.4 - 2.3
2.3 - 2.7
2.7 - 3.8
0.7 - 1.4
1.4 - 2.3
2.3 - 2.7
2.7 - 3.8
Min. Typical Max.
1.3 1.6
1.5 2.0
1.8 2.5
2.3 2.7
15.5
15 21
14 18
13 16
10 13
Attenuation Accuracy: (Referenced to Insertion Loss)
All Attenuation States
0.5 - 7.5 dB States
8.0 - 15.5 dB States
All Attenuation States
0.7 - 1.4
1.4 - 2.3
1.4 - 2.3
2.3 - 3.8
± (0.30 + 5% of Atten. Setting) Max.
± (0.25 + 3% of Atten. Setting) Max.
± (0.15 + 3% of Atten. Setting) Max.
± (0.30 + 3% of Atten. Setting) Max.
Input Power for 0.1 dB Compression
Input Third Order Intercept Point
(Two-tone Input Power = 0 dBm Each Tone)
Switching Characteristics
Vdd = 5V
Vdd = 3V
Vdd = 5V
Vdd = 3V
0.7 - 3.8
0.7 - 3.8
25
23
52
48
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.7 - 3.8
560
600
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106



Analog Devices HMC306MS10E
v06.0206
HMC306MS10 / 306MS10E
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.7 - 3.8 GHz
Insertion Loss
0
-0.5
-1
-1.5
-2
-2.5
-3 +25 C
-40 C
-3.5 +85 C
-4
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Normalized Attenuation
(Only Major States are Shown)
0
-3
-6
-9
-12
0.5 dB
1 dB
2 dB
4 dB
8 dB
15.5 dB
-15
-18
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Absolute Bit Error vs. Frequency
(Only Major States are Shown)
1.5
1.2
0.9 0.5, 1, 2 dB
0.6
4 dB
8 dB
15.5 dB
0.3
0
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Return Loss RF1, RF2
(Only Major States are Shown)
0
-5 0.5 dB
1 dB
2 dB
4 dB
-10
8 dB
14 dB
-15
-20
-25
-30
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Absolute Bit Error vs. Attenuation State
1.5
1.2
0.9 GHz
0.9 1.9 GHz
2.4 GHz
3.5 GHz
0.6
0.3
0
0.5 2 3.5 5 6.5 8 9.5 11 12.5 14 15.5
ATTENUATION STATE (dB)
Relative Phase vs. Frequency
(Only Major States are Shown)
60
2 dB
40 4 dB
8 dB
15.5 dB
20
0
-20
0.5, 1 dB
-40
0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
5
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106
5 - 61



Analog Devices HMC306MS10E
v06.0206
HMC306MS10 / 306MS10E
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, 0.7 - 3.8 GHz
5
Truth Table
V1
8 dB
Control Voltage Input
V2
4 dB
V3
2 dB
V4
1 dB
V5
0.5 dB
Attenuation
State
RF1 - RF2
High High High High High Reference I.L.
High High High High
Low
0.5 dB
High High High Low
High
1 dB
High High Low High High
2 dB
High Low High High High
4 dB
Low High High High High
8 dB
Low Low Low Low
Low
15.5 dB
Max. Atten.
Any combination of the above states will provide an attenuation
approximately equal to the sum of the bits selected.
Control & Bias Voltages
State
Bias Condition
Low 0 to +0.2V @ 20 μA Max.
High
Vdd ± 0.2V @ 20 μA Max.
Note: Vdd = +3V to 5V ± 0.2V
0.00.20.2
Application Circuit
Note:
DC Blocking Capacitors C1 & C2 are required on RF1 & RF2. Choose C1 = C2 = 100 ~ 300 pF to allow lowest customer
specific frequency to pass with minimal loss. R1= 5K Ohm is required to supply voltage to the circuit through either Pin 6
or Pin 10.
5 - 62
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)