CHANNEL DOWNCONVERTER. HMC1190ALP6NE Datasheet

HMC1190ALP6NE DOWNCONVERTER. Datasheet pdf. Equivalent

HMC1190ALP6NE Datasheet
Recommendation HMC1190ALP6NE Datasheet
Part HMC1190ALP6NE
Description BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER
Feature HMC1190ALP6NE; HMC1190ALP6NE v00.0615 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 .
Manufacture Analog Devices
Datasheet
Download HMC1190ALP6NE Datasheet




Analog Devices HMC1190ALP6NE
HMC1190ALP6NE
v00.0615
BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER
w/ Fractional-N PLL & VCO, 0.7 - 3.8 GHz
Typical Applications
Features
The HMC1190ALP6NE is Ideal for:
Multiband/Multi-standard Cellular BTS Diversity
Receivers
GSM & 3G & LTE/WiMAX/4G
MIMO Infrastructure Receivers
Wideband Radio Receivers
Multiband Basestations & Repeaters
Functional Diagram
General Description
Broadband Operation with no external matching
High-side and Low-side LO injection Operation
High Input IP3 of +24 dBm
Power Conversion Gain of 8.9 dB
Input P1dB of 11 dBm
SSB Noise Figure of 9 dB
55 dBc Channel-to-Channel Isolation
Enable/Disable Mixer and PLLVCO independently
Single-ended RF input ports
Maximum Phase Detector Rate: 100 MHz
Low Phase Noise: -110 dBc/Hz in Band Typical
PLL FOM:
-230 dBc/Hz Integer Mode, -227 dBc/Hz Frac-
tional Mode
< 180 fs Integrated RMS Jitter (1 kHz to 20 MHz)
LO Low Noise Floor: -165 dBc/Hz
Mixer Low Noise Floor: -161 dBc/Hz
Integrated VCO
External VCO Input, differential LO output
Exact Frequency Mode:
0 Hz Fractional Frequency Error
Programmable RF Output Phase
Output Phase Synchronous Frequency Changes
Output Phase Synchronization
LO Output Mute Function
Compact Solution, 6x6 mm Leadless QFN Package
The HMC1190ALP6NE is a high linearity broadband dual channel downconverting mixer with integrated PLL and VCO
optimized for multi-standard receiver applications that require a compact, low power design. Integrated wideband
limiting LO amplifiers enable the HMC1190ALP6NE to achieve an unprecedented RF bandwidth of 700 MHz to 3500
MHz for applications including Cellular/3G, LTE/WiMAX/4G. Unlike conventional narrow-band downconverters, the
HMC1190ALP6NE supports both high-side and low-side LO injection over all RF frequencies. The RF and LO input
ports are internally matched to 50 Ohms.
The HMC1190ALP6NE features an integrated LO and RF baluns, enable control of IF and LO amplifiers and bias
control interface to high linearity passive mixer cores. Balanced passive mixer combined with high-linearity IF am-
plifier architecture provides excellent LO-to-RF, LO-to-IF, and RF-to-IF isolations. Low noise figure of 9 dB, and high
IIP3 of +24 dBm allow the HMC1190ALP6NE to be used in most demanding applications. External bias control pins
enable optimization of already low power dissipation of 2.34 W (typical). Fast enable control interface reduces power
consumption further in TDD applications.
External VCO input allows the HMC1190ALP6NE to lock external VCOs, and enables cascaded LO architectures for
MIMO applications. Two separate Charge Pump (CP) outputs enable separate loop filters optimized for both integrated
and external VCOs, and seamless switching between integrated or external VCOs during operation. Programmable
RF output phase features can further phase adjust and synchronize multiple HMC1190ALP6NE’s enabling scalable
MIMO and beam-forming radio architectures.
Additional features include configurable LO output mute function, Exact Frequency Mode that enables the
HMC1190ALP6NE to generate fractional frequencies with 0 Hz frequency error, and the ability to synchronously
change frequencies without changing phase of the output signal that increases efficiency of digital pre-distortion
loops. The HMC1190ALP6NE is housed in RoHS compliant compact 6x6 mm leadless QFN package.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or RFMG-apps@hittite.com



Analog Devices HMC1190ALP6NE
HMC1190A* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC1190A Evaluation Board and Kit
DOCUMENTATION
Data Sheet
HMC1190ALP6NE: Broadband High IP3 Dual Channel
DownConverter w/Fractional-N PLL & VCO, 0.7-3.8 GHz
Data Sheet
User Guides
UG-899: Evaluating the HMC1190A Multiband Dual
Channel Downconverter with Integrated PLL and VCO
REFERENCE MATERIALS
Quality Documentation
HMC1190ALP6NE Qualification Report
DESIGN RESOURCES
HMC1190A Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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Analog Devices HMC1190ALP6NE
HMC1190ALP6NE
v00.0615
BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER
w/ Fractional-N PLL & VCO, 0.7 - 3.8 GHz
Table 1. Electrical Specifications
TA = +25°C, IF Frequency = 150 MHz, LO Power is set to ‘3’ [1], RF Input Power = -5 dBm,
LOVDD=3VRVDD=DVDD3V=CHIPEN= 3.3V,
VDDCP=VCS1=VCS2=VBIASIF1=VBIASIF2=LOBIAS1=LOBIAS2=VCC1=VCC2=VGATE1=VGATE2=5V unless
otherwise noted.
Parameter
Typical
Units
Mixer Core RF Input Frequency Range
700 - 3800
MHz
Mixer Core IF Output Frequency Range
50 - 350
MHz
RF Frequency
Side Band[2]
Conversion Gain[3]
900
LSB USB
9.1 8.7
1900
LSB USB
8.3 8.5
2200
LSB USB
8 8.1
2700
LSB USB
7.2 7.4
3500
LSB USB
6.1 6.2
MHz
dB
IIP3
25.2 23.4 26.3 25.4 27.2 26.7 26.7 27.2 27.2 28.3
dB
Noise Figure (SSB)
8.6 8.7 9.1 9 9.8 9.3 10.6 10
dB
Input 1 dB Compression
11 10.8 12.3 12.1 12.8 12.6 13.7 13.6 15.3 15.2 dBm
LO Leakage at RF Port
-42 -44 -46 -47 -52 dBm
RF to IF Isolation
Channel to Channel Isolation[4]
43.5 47.6 37.6 46.3 40.5 38.7 50.5 46.9 59.9 53.9
49.1 51.9 47.2 45.6 46 44.7 44.9 44.7 40.1 40.6
dBc
dBc
+2RF-2LO Response
79.3 77.5 84.6 73.4 80.2 80.5 77.2 73.2 70.8 71.6
dBc
+3RF-3LO Response
79.2 74.8 77.1 69.1 80.5 75.5 72.9 76.1 81 69.7 dBc
[1] LO Power Level can be adjusted using Reg 16h.
[2] LSB stands for lower side band and refers to RF<LO. USB stands for upper side band and refers to RF>LO.
[3] Balun losses at IF output ports are de-embedded.
[4] RF1 input power= -5 dBm, measurement taken from IF2 output. RF2 and IF1 ports are terminated with 50 Ohms
Table 2. DC Power Supply Specifications
Parameter
Min.
Typ.
Max.
Units.
5V Supply Rails
+4.5
+5
+5.5
V
(VDDCP, VCS1, VCS2, VDDLS, VBIASIF1, VBIASIF2, LOBIAS1, LOBIAS2, VCC1, VCC2)
200 [1]
330
556 [2]
mA
3.3V Supply Voltage
(LOVDD, 3VRVDD, DVDD3V, VCCPD, VCCPS, VCCHF)
+3
142 [1]
+3.3
193
+3.6
246 [2]
V
mA
VGATE1, VGATE2[3]
VDDIF-0.2
+5
VDDIF
V
5V Supply Rails [4]
(VDDCP, VCS1, VCS2, VDDLS, VBIASIF1, VBIASIF2, LOBIAS1, LOBIAS2, VCC1, VCC2)
324
330
338 mA
(5V)
3.3V Supply Voltage [4]
(LOVDD, 3VRVDD, DVDD3V, VCCPD, VCCPS, VCCHF) (3.3V)
185 193 200 mA
[1] LO Frequency=2400 MHz, LO_MIX is enabled in single ended mode, LO_OUT is disabled. LO_MIX power setting = 0, divide ratio = 1, divider
stage high gain = 0
[2] LO Frequency=2400 MHz, LO_MIX and LO_OUT are both enabled in differential mode. LO_MIX and LO_OUT power setting = 3, divide ratio =
62, divider stage high gain = 1
[3] VGATE1 and VGATE2 are obtained through resistors which are connected to VDDIF
[4] LO Frequency=2400 MHz, LO_MIX is enabled in differential mode, LO_OUT is disabled. LO_MIX power setting = 3. When LO_OUT is enabled
in differential mode the bias current increases by 34 mA (Typ.).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or RFMG-apps@hittite.com
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