HMC-MDB172

v03.1023 Typical Applications 2 This HMC-MDB172 is ideal for: Point-to-Point Radios VSAT Military Radar, ECM & EW Test & Measurement Equipment SATCOM HMC-MDB172 GaAs MMIC I/Q MIXER 19 - 33 GHz Features Wide IF Bandwidth: DC - 5 GHz High Image Rejection: 25 dB High LO to RF Isolation: 35 dB Passive: No DC Bias Required Die Size: 2.2 x 2.0 x 0.1 mm MIXERS - I/Q MIXERS / IRM - CHIP Functional Diagram General Description The HMC-MDB172 is a monolithic I/Q Mixer which can be used as either an image reject mixer (IRM) or a single sideband upconverter. This passive MMIC is fabricated with GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology. For downconversion applications, an external quadrature hybrid can be used to select the desired sideband while rejecting image signals. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. The HMC-MDB172 I/Q MMIC Mixer is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications,* TA = 25 °C, IF = 3 GHz, LO = +16 dBm Parameter Min. Typ. Frequency Range, RF & LO 19 - 33 Frequency Range, IF DC - 5 Conversion Loss with External Hybrid 8 Image Rejection 20 25 1 dB Compression (Input) 8 LO ...