Switching MOSFETs. CMU06N03 Datasheet

CMU06N03 MOSFETs. Datasheet pdf. Equivalent

CMU06N03 Datasheet
Recommendation CMU06N03 Datasheet
Part CMU06N03
Description N-Ch 30V Fast Switching MOSFETs
Feature CMU06N03; CMD06N03 /CMU06N03 N-Ch 30V Fast Switching MOSFETs General Description The 06N03 is the highest pe.
Manufacture Cmos
Datasheet
Download CMU06N03 Datasheet




Cmos CMU06N03
CMD06N03 /CMU06N03
N-Ch 30V Fast Switching MOSFETs
General Description
The 06N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The 06N03 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
30V
RDSON
5.2m
ID
80A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
TO252 / TO251 Pin Configuration
D
G
S
TO252
G D S TO251
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
20
80
55
155
280
48
65
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction -Case1
Typ.
---
---
Max.
62
2.8
Unit
/W
/W
1



Cmos CMU06N03
CMD06N03 /CMU06N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS 20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=12A
VDD=15V , VGS=10V , RG=3.3
ID=5A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
7.2
17.3
21.3
8.4
---
---
---
Typ.
---
0.0964
4.7
7.5
1.5
-6.16
---
---
---
22
1.7
20.8
5.3
10.5
9
21.6
26.6
10.5
2361
315
237
Max.
---
---
5.2
9
2.5
---
1
5
100
---
3.4
---
---
---
13.5
32.4
40
15.8
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A
Min.
---
---
---
Typ.
---
---
---
Max.
80
155
1
Unit
A
A
V
2







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