Switching MOSFETs. CMD95N03 Datasheet

CMD95N03 MOSFETs. Datasheet pdf. Equivalent

CMD95N03 Datasheet
Recommendation CMD95N03 Datasheet
Part CMD95N03
Description N-Ch 30V Fast Switching MOSFETs
Feature CMD95N03; CMD95N03 / CMU95N03 N-Ch 30V Fast Switching MOSFETs General Description The 95N03 is the highest p.
Manufacture Cmos
Datasheet
Download CMD95N03 Datasheet




Cmos CMD95N03
CMD95N03 / CMU95N03
N-Ch 30V Fast Switching MOSFETs
General Description
The 95N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The 95N03 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% avalanche tested
Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
30V
RDSON
5.5m
ID
95A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
TO252 / TO251 Pin Configuration
D
G
S
TO252
G D S TO251
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
20
95
70
280
160
95
80
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient1
Thermal Resistance Junction -Case1
Typ.
---
---
Max.
100
2
Unit
/W
/W
1



Cmos CMD95N03
CMD95N03 / CMU95N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=35A
VGS=4.5V , ID=35A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=150
VGS 20V , VDS=0V
VDS=10V, ID=15A
VDS=0V , VGS=0.5V, f=1MHz
VDS=15V , VGS=5V , ID=35A
VDD=15V , VGS=10V , RG=6.2
ID=35A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
Typ.
---
25
4.5
6.2
Max.
---
---
5.5
7.8
Unit
V
MV/
m
1.0 1.5
3
V
--- --- 1 uA
--- --- 250
--- --- 100 nA
--- 50 ---
S
--- 2.1 ---
--- 37 ---
--- 10 ---
nC
--- 15.3 ---
--- 21 ---
--- 95 ---
--- 59 ---
ns
--- 33 ---
--- 2500 ---
--- 525 ---
pF
--- 330 ---
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=35A ,TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=27V,VGS=10V,L=0.43mH,IAS=28A
Min.
---
---
---
Typ.
---
---
---
Max.
95
280
1.3
Unit
A
A
V
2







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