60V MOSFET. CMU50N06B Datasheet

CMU50N06B MOSFET. Datasheet pdf. Equivalent

CMU50N06B Datasheet
Recommendation CMU50N06B Datasheet
Part CMU50N06B
Description N-Channel 60V MOSFET
Feature CMU50N06B; CMD50N06B/CMU50N06B N-Channel 60V MOSFET General Description The 50N06B combines advanced trench M.
Manufacture Cmos
Datasheet
Download CMU50N06B Datasheet




Cmos CMU50N06B
CMD50N06B/CMU50N06B
N-Channel 60V MOSFET
General Description
The 50N06B combines advanced trench
MOSFET technology with a low resistance
package to provide extremely low RDS(ON).
This device is ideal for boost converters
and synchronous rectifiers for consumer,
telecom, industrial power supplies and
LED backlighting.
Features
50A,60V.RDS(ON)=0.013Ω@VGS=10V
N-channel-Enhancement mode
Low Threshold Drive
100% Avalanche Tested
Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
60V
RDSON
13m
ID
50A
Applications
DC-DC & DC-AC Converters
Motor Control, Audio Amplifiers
High Current, High Speed Switching
Primary Switch for 12V and 24V system
TO252 / TO251 Pin Configuration
GDS
TO252
(CMD50N06B)
G DS
TO251
(CMU50N06B)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
20
50
35
150
85
35
75
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction -Case
Typ.
---
---
Max.
50
2.1
Unit
/W
/W
1



Cmos CMU50N06B
CMD50N06B/CMU50N06B
Electrical Characteristics (TJ=25 , unless otherwise noted)
N-Channel 60V MOSFET
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250μA
Reference to 25 , ID=250μA
VGS=10V , ID=50A
VGS=VDS , ID =250μA
VDS=60V , VGS=0V , TJ=25
VDS=60V , VGS=0V , TJ=125
VGS 20V , VDS=0V
VDS=5V , ID=20A
VDS=0V , VGS=0V , f=1MHz
VDS=30V , VGS=10V , ID=50A
VDD=30V , VG =10V , RG=9.6
ID=50A
VDS=30V , VGS=0V , f=1MHz
Min.
60
---
---
Typ.
---
0.065
11
Max.
---
---
13
2 --- 4
Unit
V
V/
m
V
--- --- 1
uA
--- --- 100
--- --- 100 nA
--- 32 ---
S
--- 1.2 ---
--- 35
---
--- 10 --- nC
--- 8
---
--- 12 ---
--- 86 ---
--- 35 ---
ns
--- 26 ---
--- 5600 ---
--- 540 ---
pF
--- 110 ---
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=50A ,TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=36A
Min.
---
---
---
Typ.
---
---
---
Max.
50
150
1.25
Unit
A
A
V
2







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