Effect Transistor. CMP75N80 Datasheet

CMP75N80 Transistor. Datasheet pdf. Equivalent

CMP75N80 Datasheet
Recommendation CMP75N80 Datasheet
Part CMP75N80
Description N-Channel Enhancement Mode Field Effect Transistor
Feature CMP75N80; CMP75N80/CMB75N80/CMI75N80 N-Channel Enhancement Mode Field Effect Transistor General Description .
Manufacture Cmos
Datasheet
Download CMP75N80 Datasheet




Cmos CMP75N80
CMP75N80/CMB75N80/CMI75N80
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 75N80 is N-Channel MOSFET,
It has specifically been designed to
minimize input capacitance and gate
charge. The device is therefore suitable
in advanced high-efficiency switching
applications.
Features
BVDSS
80V
RDSON
11m
Applications
Motor Control
DC-DC converters
Switching applications
ID
75A
Minimize input capacitance and gate charge
100% avalanche rated
Low On-Resistance
TO220/263/262 Pin Configuration
Absolute Maximum Ratings
G
DS
TO-220
(CMP75N80)
GD
S
TO-263
(CMB75N80)
G DS
TO-262
(CMI75N80)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Value
80
20
75
60
230
400
75
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Value
37
2
Unit
/W
/W
1



Cmos CMP75N80
CMP75N80/CMB75N80/CMI75N80
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS=0V , ID=250uA
Min.
80
Typ.
---
Max.
---
Unit
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V , ID=40A
--- --- 11 m
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2.0 --- 4.0 V
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance 3
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=Max Rating , VGS=0V
VGS 20V
VDS=15V , ID=40A
f=1MHz
ID = 75A
VDD =60V
VGS =10V
V DD =30V
R G=10
V GS =10V
R L =15
VDS=20V , VGS=0V , f=1MHz
--- --- 1 uA
--- --- 100 nA
--- 20 ---
S
--- 2.3 ---
--- 120 ---
--- 54 ---
nC
--- 38 ---
--- 80 ---
--- 37
---
--- 140 ---
ns
--- 27
---
--- 7400 ---
--- 450 ---
pF
--- 140 ---
Diode Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage3
Note :
1.Pulse width limited by safe operating area
2.Starting TJ=25 , ID=30 A, VDD= 37.5V
3.Pulsed: pulse duration<=300µs, duty cycle <=2%
Conditions
VGS=0V , ISD = 25 A
Min.
---
Typ.
---
Max.
1.5
Unit
V
2







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