N-Channel MOSFET. CMU20N06L Datasheet

CMU20N06L MOSFET. Datasheet pdf. Equivalent

CMU20N06L Datasheet
Recommendation CMU20N06L Datasheet
Part CMU20N06L
Description 60V N-Channel MOSFET
Feature CMU20N06L; CMD20N06L/CMU20N06L 60V N-Channel MOSFET General Description The 20N06 combines advanced trench MO.
Manufacture Cmos
Datasheet
Download CMU20N06L Datasheet




Cmos CMU20N06L
CMD20N06L/CMU20N06L
60V N-Channel MOSFET
General Description
The 20N06 combines advanced trench
MOSFET technology .This advanced
technology has been especially tailored
to minimize on-state resistance, provide
superior switching performance.
These devices are well suited for low voltage
applications such as automotive, DC/DC
converters, and high efficiency switching for
power management in portable and battery
operated products.
Features
20A,60V.RDS(ON)=0.046Ω@VGS=10V
Fast switching
Low Threshold Drive
Absolute Maximum Ratings
Product Summery
BVDSS
60V
RDSON
46m
ID
20A
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
TO252 / TO251 Pin Configuration
GDS
TO252
(CMD20N06L)
G DS
TO251
(CMU20N06L)
Symbol
VDS
VGS
ID@TA=25
ID@TA=100
IDM
EAS
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
20
20
10
60
170
60
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient (Note 2)
Thermal Resistance Junction -Case
Typ.
---
---
Max.
80
2.5
Unit
/W
/W
1



Cmos CMU20N06L
CMD20N06L/CMU20N06L
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
Conditions
VGS=0V , ID=250μA
Reference to 25 , ID=250μA
VGS=10V , ID=10A (Note 3)
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=VDS , ID =250μA
VDS=60V , VGS=0V
VDS=60V , VGS=0V , TJ=150
VGS 20V , VDS=0V
VDS=7V , ID=6A
VDS=48V , VGS=10V , ID=20A
(Note 3)
VDD=30V , VGS=10V , RG=9.1
ID=20A (Note 3)
VDS=25V , VGS=0V , f=1MHz
60V N-Channel MOSFET
Min.
60
---
---
Typ.
---
0.07
---
Max.
---
---
46
Unit
V
V/
m
1 --- 3
V
--- --- 1
uA
--- --- 10
--- --- 100 nA
--- 13 --- ms
--- 21
---
--- 5.6 --- nC
--- 7.5 ---
--- 10 ---
--- 62 ---
--- 27 ---
ns
--- 40 ---
--- 720 ---
--- 205 ---
pF
--- 48 ---
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=20A (Note 3)
Notes :
1. VDD = 25 V, VGS = 10 V,L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 V, Starting TJ = 25℃.
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. Pulse Test: Pulse Width ≤ 300 us, Duty Cycle ≤ 2%.
Min.
---
---
---
Typ.
---
---
---
Max.
20
60
1.2
Unit
A
A
V
2







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