D-S MOSFET. CMU40P03 Datasheet

CMU40P03 MOSFET. Datasheet pdf. Equivalent

CMU40P03 Datasheet
Recommendation CMU40P03 Datasheet
Part CMU40P03
Description P-Channel 30-V (D-S) MOSFET
Feature CMU40P03; CMD40P03 /CMU40P03 P-Channel 30-V (D-S) MOSFET General Description Product Summery These miniatu.
Manufacture Cmos
Datasheet
Download CMU40P03 Datasheet




Cmos CMU40P03
CMD40P03 /CMU40P03
P-Channel 30-V (D-S) MOSFET
General Description
Product Summery
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on)and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers,PCMCIA
cards, cellular and cordless telephones.
Features
BVDSS
-30V
RDSON
22m
Applications
DC-DC Converters
Desktop PCs
LED controller
ID
-30A
Advanced high cell density Trench technology
Fast switching speed
Lower On-resistance
100% EAS Guaranteed
Simple Drive Requirement
Absolute Maximum Ratings
TO252 / TO251 Pin Configuration
D
G
S
TO252
G D S TO251
G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
20
-30
-18
-90
42
-30
50
-55 to 175
-55 to 175
D
S
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction -Case1
Typ.
---
---
Max.
70
3.5
Unit
/W
/W
1



Cmos CMU40P03
CMD40P03 / CMU40P03
Electrical Characteristics (TJ=25 , unless otherwise noted)
P-Channel 30-V (D-S) MOSFET
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25 , ID=-1mA
VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
VGS=VDS , ID =-250uA
VDS=-30V, VGS=0V , TJ=25
VDS=-24V, VGS=0V , TJ=150
VGS 20V , VDS=0V
VDS=-5V , ID=-11A
VDS=0V , VGS=0V , f=1MHz
VDS=-24V, VGS=-4.5V, ID=-18A
VDD=-15V, VGS=-10V, RG=3.3
ID=-18A
VDS=-25V, VGS=0V , f=1MHz
Min.
-30
---
---
---
-1
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.02
---
---
---
5.08
---
---
---
24
1.7
16
4.4
7.2
14
25.6
51
41
1050
285
200
Max.
---
---
22
37
-3
---
-1
-25
100
---
---
26
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-18A
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-24V,VGS=-10V,L=0.02mH,IL=-11A
Min.
---
---
---
Typ.
---
---
---
Max.
-30
-90
-1.2
Unit
A
A
V
2







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