N-Channel MOSFET. CMU12N10 Datasheet

CMU12N10 MOSFET. Datasheet pdf. Equivalent

CMU12N10 Datasheet
Recommendation CMU12N10 Datasheet
Part CMU12N10
Description 100V N-Channel MOSFET
Feature CMU12N10; CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-eff.
Manufacture Cmos
Datasheet
Download CMU12N10 Datasheet




Cmos CMU12N10
CMD12N10 / CMU12N10
100V N-Channel MOSFET
General Description
N-channel enhancement mode field-effect
power transistor in a plastic envelope suitable
for surface mounting. The device is intended
for use in Switched Mode Power Supplies (SMPS),
motor control, welding, DC/DC and AC/DC
converters, and in general purpose switching
applications.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Mounting Information Provided for the DPAK Package
100% avalanche tested
Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
100V
RDSON
0.165
ID
12A
Applications
PWM Motor Controls
LED controller
Power Supplies
DC-DC & DC-AC Converters
TO252 / TO251 Pin Configuration
D
G
S
TO252
G D S TO251
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current 1
Continuous Drain Current 1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
20
12
7
40
64
10
50
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction -Case1
Typ.
---
---
Max.
100
3
Unit
/W
/W
1



Cmos CMU12N10
CMD12N10 / CMU12N10
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=250uA
VGS=10V , ID=6A
VGS=4.5V , ID=6A
VGS=VDS , ID =250uA
VDS= 100V , VGS=0V , TJ=25
VDS=100V , VGS=0V , TJ=150
VGS 20V , VDS=0V
VDS=10V, ID=6A
VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=5V , ID=6A
VDD=50V , VGS=10V , RG=9.1
ID=12A
VDS=25V , VGS=0V , f=1MHz
100V N-Channel MOSFET
Min.
100
---
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
113
0.128
0.164
3
4.4
---
---
---
8.9
1.1
13.5
3.2
7.4
9.6
45
40
21
498
114
38
Max.
---
---
0.165
0.22
4
---
1
10
100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
MV/
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=12A , TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IL=12A
Min.
---
---
---
Typ.
---
---
---
Max.
12
40
1.45
Unit
A
A
V
2







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