Effect Transistor. CMB3205A Datasheet

CMB3205A Transistor. Datasheet pdf. Equivalent

CMB3205A Datasheet
Recommendation CMB3205A Datasheet
Part CMB3205A
Description N-Channel Enhancement Mode Field Effect Transistor
Feature CMB3205A; CMP3205A / CMB3205A N-Channel Enhancement Mode Field Effect Transistor General Description Produc.
Manufacture Cmos
Datasheet
Download CMB3205A Datasheet




Cmos CMB3205A
CMP3205A / CMB3205A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 3205A is a N-channel Power MOSFET.
It has specifically been designed to minimize
input capacitance and gate charge. The
BVDSS
55V
RDSON
8.0m
ID
110A
device is therefore suitable in advanced
Applications
high-efficiency switching applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Absolute Maximum Ratings
LED POWER CONTROLLER
DC-DC & DC-AC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
TO220 / TO263 Pin Configuration
G
DS
TO-220
(CMP3205A)
GD S
TO-263
(CMB3205A)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
55
20
110
80
330
850
62
200
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Typ.
---
---
Max.
62.5
0.79
Unit
/W
/W
1



Cmos CMB3205A
CMP3205A / CMB3205A
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=62A
VGS=VDS , ID =250uA
VDS=Max rating, VGS=0V
VDS=Max rating , VGS=0V@150
VGS 20V , VDS=0V
VDS=25V , ID=62A
ID = 62A
VDS =44V
VGS =10 V
V DS =28V
ID = 62A
R G=4.7Ω ,V GS =10V
VDS=25V , VGS=0V , f=1MHz
Min.
55
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.057
6.5
---
---
---
---
42
71
16
28
16
98
65
81
3200
745
180
Max.
---
---
8.0
4
1
10
100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=62 A , TJ=25
Note :
1.Repetitive rating; pulse width limited by max. junction temperature.
2.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=62A
Min.
---
---
---
Typ.
---
---
---
Max.
110
330
1.3
Unit
A
A
V
2







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