N-Channel MOSFET. CMH20N50 Datasheet

CMH20N50 MOSFET. Datasheet pdf. Equivalent

CMH20N50 Datasheet
Recommendation CMH20N50 Datasheet
Part CMH20N50
Description 500V N-Channel MOSFET
Feature CMH20N50; CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement m.
Manufacture Cmos
Datasheet
Download CMH20N50 Datasheet




Cmos CMH20N50
CMH20N50
500V N-Channel MOSFET
General Description
Product Summery
These N-Channel enhancement mode power
field effect transistors are produced using
advanced technology which has been
especially tailored to minimize on-state
resistance, provide superior switching
performance,and withstand high energy
pulse in the avalanche and commutation
mode. These devices are well suited for high
efficient switched mode power supplies and
active power factor correction.
Features
100% avalanche tested
Fast Switching
Improved dv/dt capability
Absolute Maximum Ratings
BVDSS
500V
RDSON
0.26
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
TO247 Pin Configuration
G
D
S
TO-247
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
30
20
11
60
860
20
280
-55 to 150
-55 to 150
ID
20A
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Typ.
---
---
Max.
40
0.44
Unit
/W
/W
1



Cmos CMH20N50
CMH20N50
Electrical Characteristics (TJ=25 , unless otherwise noted)
500V N-Channel MOSFET
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance 3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=250uA
VGS=10V , ID=10A
Min.
500
---
---
Typ.
---
0.5
---
Max.
---
---
0.26
Unit
V
V/
VGS=VDS , ID =250uA
2
VDS=500V, VGS=0V
VDS=400V , VGS=0V , TC=125
VGS 30V , VDS=0V
VDS=40V , ID=10A
ID=20A
VDS =400V
VGS =10V
(Note 3, 4)
V DS =250V
ID=20A
R G=25Ω
(Note 3, 4)
VDS=25V , VGS=0V , f=1MHz
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
24
52
18
26
88
270
105
117
2500
380
35
4V
1
uA
10
100 nA
--- S
69
--- nC
---
---
--- ns
---
---
---
--- pF
---
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=20 A , TJ=25
Note :
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.L = 4.1mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25
3.Pulse Test: Pulse width≤300μs, Duty Cycle≤2%
4.Essentially Independent of Operating Temperature Typical Characteristics
Min.
---
---
---
Typ.
---
---
---
Max.
20
60
1.4
Unit
A
A
V
2







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