Silicon MOSFET. CMP5950 Datasheet

CMP5950 MOSFET. Datasheet pdf. Equivalent

CMP5950 Datasheet
Recommendation CMP5950 Datasheet
Part CMP5950
Description P-Channl Silicon MOSFET
Feature CMP5950; CMP5950 P-Channl Silicon MOSFET General Description The CMP5950 uses advanced trench technology an.
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Cmos CMP5950
CMP5950
P-Channl Silicon MOSFET
General Description
The CMP5950 uses advanced trench
technology and design to provide
excellent RDS(ON) with low gate
charge. It can be used in a wide
variety of applications.
Features
P-Channel
Low ON-resistance.
Fast Switching
100% avalanche tested
Absolute Maximum Ratings
Product Summery
BVDSS
-100V
RDSON
42m
Applications
Inverters
Motor drive
DC / DC converter
TO220 Pin Configuration
ID
-35A
D
G
DS
TO-220
(CMP5950)
G
S
Symbol
VDS
VGS
ID@TC=25
IDM
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-100
20
-35
-105
-35
65
-55 to 150
150
Units
V
V
A
A
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Typ.
---
---
Max.
62.5
2
Unit
/W
/W
1



Cmos CMP5950
CMP5950
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
RDS(ON)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
VGS=-10V, ID=-10A
VGS=-4.5V , ID=-8A
VGS=VDS , ID =-250 uA
VDS=-100V , VGS=0V
VGS 20V , VDS=0V
VDS=-10V, ID=-10A
ID = -20A
VDS =-50V
VGS =-10V
V DS =-50V
ID = -10A
R L =5.6Ω
V GS =-10V
VDS= -20V, VGS=0V , f=1MHz
P-Channl Silicon MOSFET
Min.
-100
---
---
-1
---
Typ.
---
39
43
---
---
Max.
---
42
48
-3
-1
Unit
V
m
V
uA
--- --- 100 nA
--- 24 ---
S
--- 75 ---
--- 13 --- nC
--- 16 ---
--- 25
---
--- 90 ---
--- 310 ---
ns
--- 100
---
--- 4500 ---
--- 270 ---
pF
--- 200
---
Diode Characteristics
Symbol
trr
Qrr
VSD
Parameter
Reverse Recovery Time
Reverse Recovery Charge
Diode Forward Voltage
Conditions
IS=-8A
dI/dt=-100A/μs
VGS=0V , IS=-20A
Min.
---
---
---
Typ.
60
150
---
Max.
---
---
-1.2
Unit
ns
nC
V
2







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