Effect Transistor. CMN2300 Datasheet

CMN2300 Transistor. Datasheet pdf. Equivalent

CMN2300 Datasheet
Recommendation CMN2300 Datasheet
Part CMN2300
Description N-Channel Enhancement Mode Field Effect Transistor
Feature CMN2300; CMN2300 N-Channel Enhancement Mode Field Effect Transistor General Description These miniature sur.
Manufacture Cmos
Datasheet
Download CMN2300 Datasheet




Cmos CMN2300
CMN2300
N-Channel Enhancement Mode Field Effect Transistor
General Description
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
rDS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC converters,
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards, cellular
and cordless telephones.
Features
RDS(ON)<25mΩ @ VGS=4.5V
RDS(ON)<35mΩ @ VGS=2.5V
SOT-23 Package
Absolute Maximum Ratings
Product Summery
BVDSS
20V
RDSON
25m
ID
6A
Applications
DC-DC converters
Power Management in Notebook Computer
Portable Equipment and Battery Powered Systems
SOT-23 Pin Configuration
D
S
G
SOT-23
(CMN2300)
G
D
◀▲
S
Symbol
VDS
VGS
ID@TC=25
IDM
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
8
6
18
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
Thermal Data
Symbol
R JA
Parameter
Thermal Resistance Junction-ambient
Typ.
---
Max.
100
Unit
/W
1



Cmos CMN2300
CMN2300
Electrical Characteristics (TJ=25
N-Channel Enhancement Mode Field Effect Transistor
, unless otherwise noted)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Td(off)
Ciss
Coss
Crss
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
VGS=4.5V , ID=5.6A
VGS=2.5V , ID=4A
VGS=VDS , ID =250uA
VDS=16V , VGS=0V
VGS 8V , VDS=0V
VDS=5V , ID=4A
ID = 4A
VDS =10V
VGS =4.5V
V DS =10V , I D =3.5A , R G=10
VDS=10V , VGS=0V , f=1MHz
Min.
20
---
---
0.45
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
---
---
---
---
---
18
9.0
1.8
4.2
---
---
---
---
---
Max.
---
25
35
1.2
1
100
---
---
---
---
20
60
650
150
---
Unit
V
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
Conditions
VGS=0V , IS =0.75A
Min.
---
Typ.
---
Max.
1.3
Unit
V
2







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