Effect Transistor. CMP1405 Datasheet

CMP1405 Transistor. Datasheet pdf. Equivalent

CMP1405 Datasheet
Recommendation CMP1405 Datasheet
Part CMP1405
Description N-Channel Enhancement Mode Field Effect Transistor
Feature CMP1405; CMP1405/CMB1405 N-Channel Enhancement Mode Field Effect Transistor General Description Product Su.
Manufacture Cmos
Datasheet
Download CMP1405 Datasheet




Cmos CMP1405
CMP1405/CMB1405
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 1405 is a N-channel Power MOSFET.
It has specifically been designed to minimize
input capacitance and gate charge. The
BVDSS
55V
RDSON
5.5m
device is therefore suitable in advanced
Applications
high-efficiency switching applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Absolute Maximum Ratings
LED power controller
DC-DC & DC-AC converters
High current, High speed switching
Solenoid and relay drivers
Motor control, Audio amplifiers
TO220 / TO263 Pin Configuration
G
DS
TO-220
(CMP1405)
GD S
TO-263
(CMB1405)
ID
140A
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current,VGS @ 10V
Continuous Drain Current,VGS @ 10V
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
55
20
140
99
420
550
200
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Junction-to-Ambient (PCB mount)3
Junction-to-Case
Typ.
---
---
Max.
40
0.75
Unit
/W
/W
1



Cmos CMP1405
CMP1405/CMB1405
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=101A
VDS=10V, ID =250uA
4
VDS=55V, VGS=0V
VDS=44V , VGS=0V@150
VGS 20V
ID = 101A
VDS =44V
VGS =10 V
4
V DS =38V
ID = 110A
R G=1.1Ω ,V GS =10V
4
VDS=25V , VGS=0V , f=1MHz
Min.
55
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.057
---
---
---
---
---
160
40
58
18
175
138
100
4800
1080
250
Max.
---
---
5.5
4
20
250
200
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
uA
nA
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage
Conditions
Min.
VG=VD=0V , Force Current
---
---
VGS=0V , IS=101A , TJ=25 4
---
Typ.
---
---
---
Max.
140
420
1.3
Unit
A
A
V
Note :
1.Repetitive rating; pulse width limited by max. junction temperature.
2.Starting TJ = 25, L = 0.11mH, RG = 25Ω, IAS = 101A.
3.This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
4.Pulse width ≤ 400μs; duty cycle ≤ 2%.
2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)