Effect Transistor. CMN2309 Datasheet

CMN2309 Transistor. Datasheet pdf. Equivalent

CMN2309 Datasheet
Recommendation CMN2309 Datasheet
Part CMN2309
Description P-Channel Enhancement Mode Field Effect Transistor
Feature CMN2309; CMN2309 P-Channel Enhancement Mode Field Effect Transistor General Description This MOSFET utilize.
Manufacture Cmos
Datasheet
Download CMN2309 Datasheet




Cmos CMN2309
CMN2309
P-Channel Enhancement Mode Field Effect Transistor
General Description
This MOSFET utilizes a unique structure
that combines the benefits of low
on-resistance with fast switching speed,
making it ideal for high-efficiency power
management applications.
Features
RDS(ON)<250mΩ @ VGS=-10V
RDS(ON)<300mΩ @ VGS=-4.5V
Fast switching speed
Surface mount package
Absolute Maximum Ratings
Product Summery
BVDSS
-60V
RDSON
250m
ID
-1.6A
Applications
DC-DC converters
Relay and solenoid driving
Power management functions
Load switch
SOT-23 Pin Configuration
D
S
G
SOT-23
(CMN2309)
G
D
S
Symbol
VDS
VGS
ID
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
20
-1.6
-6
1
-55 to 150
150
Units
V
V
A
A
W
Thermal Data
Symbol
R JA
Parameter
Thermal Resistance Junction-abmient (t≤5s)
Typ.
---
Max.
120
Unit
/W
1



Cmos CMN2309
CMN2309
Electrical Characteristics (TJ=25
P-Channel Enhancement Mode Field Effect Transistor
, unless otherwise noted)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
IDSS
IGSS
Td(on)
Td(off)
Ciss
Coss
Crss
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
VGS=-10V , ID=-1.8A
VGS=-4.5V , ID=-1.4A
VGS=VDS , ID =-250uA
VDS=-60V , VGS=0V
VGS 20V , VDS=0V
V DS =-30V , RG=3.3 Ω
I D =-1A
VDS=-25V , VGS=0V , f=1MHz
Min.
-60
---
---
-1
---
---
---
---
---
---
---
Typ.
---
---
---
---
---
---
18
7.5
350
38
20
Max.
---
250
300
-3
-10
100
---
---
---
---
---
Unit
V
m
V
uA
nA
ns
pF
Diode Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
Conditions
VGS=0V , IS =-1.2A
Min.
---
Typ.
---
Max.
-1.2
Unit
V
2







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