Switching MOSFETs. CMP50N03 Datasheet

CMP50N03 MOSFETs. Datasheet pdf. Equivalent

CMP50N03 Datasheet
Recommendation CMP50N03 Datasheet
Part CMP50N03
Description N-Ch 30V Fast Switching MOSFETs
Feature CMP50N03; CMP50N03/CMB50N03/CMI50N03 N-Ch 30V Fast Switching MOSFETs General Description The 50N03 is N-ch M.
Manufacture Cmos
Datasheet
Download CMP50N03 Datasheet




Cmos CMP50N03
CMP50N03/CMB50N03/CMI50N03
N-Ch 30V Fast Switching MOSFETs
General Description
The 50N03 is N-ch MOSFETs
with extreme high cell density ,
which provide excellent RDSON
and gate charge for most of the
synchronous buck converter
applications.
Features
Simple Drive Requirement
Fast Switching
Low On-Resistance
Product Summery
BVDSS
30V
RDSON
12m
ID
50A
Applications
LED POWER CONTROLLER
DC-DC & DC-AC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
TO220 / TO263/TO262 Pin Configuration
Absolute Maximum Ratings
G
DS
TO-220
(CMP50N03)
GD S
TO-263
(CMB50N03)
G DS
TO-262
(CMI50N03)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current 1
Continuous Drain Current 1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
20
50
40
150
45
50
64
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient1
Thermal Resistance Junction-case
Typ.
---
---
Max.
62
1.5
Unit
/W
/W
1



Cmos CMP50N03
CMP50N03/CMB50N03/CMI50N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=25A
VGS=4.5V , ID=25A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V
VDS=24V , VGS=0V, TC =125°C
VGS 20V , VDS=0V
VDS=5 V , ID=25A
VDS=0V , VGS=0V , f=1MHz
ID=25 A
VDS =15V
VGS =4.5V
V DS =15V
ID = 1A
R G=6
V GS =10V
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
Typ.
---
0.025
10.5
16
Max.
---
---
12
20
1 --- 3
--- ---
1
--- ---
25
--- --- 100
--- 50 ---
--- 1.3 ---
--- 23 ---
--- 8.6 ---
--- 7.3 ---
--- 12.2 ---
--- 10
---
--- 45
---
--- 15.5 ---
--- 2050 ---
--- 389 ---
--- 153 ---
Unit
V
V/
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=25 A , TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,ID =12A
Min.
---
---
---
Typ.
---
---
---
Max.
50
150
1.3
Unit
A
A
V
2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)