NON-REFLECTIVE SWITCH. HMC641 Datasheet

HMC641 SWITCH. Datasheet pdf. Equivalent

HMC641 Datasheet
Recommendation HMC641 Datasheet
Part HMC641
Description GaAs MMIC SP4T NON-REFLECTIVE SWITCH
Feature HMC641; v01.0108 Typical Applications The HMC641 is ideal for: • Telecom Infrastructure • Microwave Radio & .
Manufacture Analog Devices
Datasheet
Download HMC641 Datasheet




Analog Devices HMC641
v01.0108
Typical Applications
The HMC641 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space Hybrids
4 • Test Instrumentation
Functional Diagram
HMC641
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 18 GHz
Features
Broadband Performance: DC - 18 GHz
High Isolation: 42 dB @ 12 GHz
Low Insertion Loss: 2.1 dB @ 12 GHz
Integrated 2:4 TTL Decoder
Small Size: 1.92 x 1.60 x 0.10 mm
General Description
The HMC641 is a broadband non-reflective GaAs
PHEMT SP4T switch chip. Covering DC to 18 GHz,
this switch offers high isolation and low insertion
loss and extends the frequency coverage of Hittite’s
SP4T switch product line. This switch also includes
an on board binary decoder circuit which reduces
the number of required logic control lines to two. The
switch operates using a negative control voltage of
0/-5V, and requires a fixed Vss bias of -5V. All data
is tested with the chip in a 50 Ohm test fixture con-
nected via one 3.0 x 0.5 mil gold ribbon of minimal
length on each RF port.
Electrical Specifications, TA = +25° C, With 0/-5V Control, Vss= -5V, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 12 GHz
DC - 18 GHz
Min.
Typ.
Max.
Units
1.8 2.1 dB
2.8 3.1 dB
Isolation (RFC to RF1 - RF4)
DC - 12 GHz
DC - 18 GHz
39 42
37 40
dB
dB
Return Loss
Return Loss
“On State”
“Off State”
DC - 12 GHz
DC - 18 GHz
DC - 18 GHz
12 15
11 14
12 15
dB
dB
dB
Input Power for 1 dB Compression
2.05- 18 GHz 21 24
dBm
Input Third Order Intercept
(Two-Tone Input Power= +14 dBm Each Tone)
0.05 - 18 GHz 37 40
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 18GHz
14 ns
95 ns
4 - 38
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Analog Devices HMC641
v01.0108
HMC641
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 18 GHz
Insertion Loss vs. Temperature
0
-1
-2
-3
+25 C
-4 +85 C
- 55 C
-5
0 2 4 6 8 10 12 14 16 18 20
FREQUENCY (GHz)
Isolation
0
-10
-20
-30
-40
-50
-60
-70
024
RF1
RF2
RF3
RF4
6 8 10 12 14 16 18 20
FREQUENCY (GHz)
Return Loss
0
-5
-10
RFC
RF1,2,3,4 On
RF1,2,3,4 Off
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
FREQUENCY (GHz)
1 dB Input Compression Point
28
26
24
22
20
18
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Input Third Order Intercept
Point @ +14 dBm Tone Power
50
45
40
35
30
25
20
15
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
4
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4 - 39



Analog Devices HMC641
v01.0108
HMC641
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 18 GHz
4
IP3 vs. Input Tone Power @ 500 MHz
44
42
40
38
36
34
0 2 4 6 8 10 12 14
POWER (dBm)
Absolute Maximum Ratings
Bias Voltage Range (Vss)
-7 Vdc
Control Voltage Range (A & B)
Vss -0.5V to +1 Vdc
Channel Temperature
150 °C
Thermal Resistance
188 °C/W
Channel to die bottom (Insertion Loss Path)
Thermal Resistance
Channel to die bottom (Terminated Path)
222 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Maximum Input Power
+24 dBm
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
IP3 vs. Input Tone Power @ 12 GHz
44
42
40
38
36
34
0 2 4 6 8 10 12 14
POWER (dBm)
Truth Table
Control Input
AB
High
High
Low High
High
Low
Low Low
Signal Path State
RFC to:
RF1
RF2
RF3
RF4
Bias Voltage & Current
Vss
(Vdc)
-5
Vss Range= -5.0 Vdc ±10%
Iss (Typ)
(mA)
3
Iss (Max)
(mA)
6
TTL/CMOS Control Voltages
State
Low
High
Bias Condition
-3V to 0 Vdc @ 60 uA Typ.
-5 to -4.2 Vdc @ 5 uA Typ.
4 - 40
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