Non-Reflective Switch. HMC349ALP4CE Datasheet

HMC349ALP4CE Switch. Datasheet pdf. Equivalent

HMC349ALP4CE Datasheet
Recommendation HMC349ALP4CE Datasheet
Part HMC349ALP4CE
Description High Isolation SPDT Non-Reflective Switch
Feature HMC349ALP4CE; Switches - SPDT - SMT v01.0314 Typical Applications The HMC349ALP4CE is ideal for: • Basestation In.
Manufacture Analog Devices
Datasheet
Download HMC349ALP4CE Datasheet




Analog Devices HMC349ALP4CE
v01.0314
Typical Applications
The HMC349ALP4CE is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
Functional Diagram
HMC349ALP4CE
High Isolation SPDT
Non-Reflective Switch, DC - 4 GHz
Features
High Isolation: 67 dB @ 1 GHz
62 dB @ 2 GHz
Single Positive Control: 0/+5V
+53 dBm Input IP3
Non-Reflective Design
All Off State
16 mm2 Leadless QFN SMT Package
General Description
The HMC349ALP4CE is a high isolation non-reflective
DC to 4 GHz GaAs MESFET SPDT switch in a low cost
leadless surface mount package. The switch is ideal
for cellular/PCS/3G basestation applications yielding
60 to 65 dB isolation, low 0.9 dB insertion loss and
+53 dBm input IP3. Power handling is excellent
up through the 3.5 GHz WLL band with the switch
offering a P1dB compression point of +31 dBm. On-
chip circuitry allows a single positive voltage control of
0/+5 Volts at very low DC currents. An enable input
(EN) set to logic high will put the switch in an “all off”
state.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min. Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.9 1.2 dB
1.0 1.3 dB
1.2 1.5 dB
1.4 1.7 dB
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +10 dBm Each Tone)
Switching Speed
DC - 1.0 GHz
DC - 4.0 GHz
60 67
55 62
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
22
20
17
0.5 - 4.0 GHz
20
0.25 - 4.0 GHz 30 34
0.25 - 4.0 GHz
53
DC - 4.0 GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
60 ns
150 ns
1 IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9eAreicowist7etspihssipe8usepfsop-lbeularr2.neioicdtSlcp5iseepeaevu0rreetstcya-deioinofo3,iycfrtnno3atdophtria4eboeSftienoer3rsrnursaetasspc:noupcyrbpeHujipcernFoaatcifirttvttareieetnttnoixg:aottecnew:rPmhdign9aeeMhhnrn7rtegssotls.8eiiaocnobwf-frel2Aiepoth:n.5aowatH9ue0lotona7g-wntsv38oDeotevi3e-crev2eo7riC,.ct5h3eNneos0oor.r-p3oFOPA3Oohprn4arrope3dntlpiTieecorei:aorcnc7treihO,8o,n1n2naod-S3lp-eoE2lulgpiil9vpniysez-pe4rW@aoy7arb,a0hty:tae0i,Pntwt•Ptdhhi.wOtoOetDnor.w.decrB:epi.ovo1hrlax-emoi8ctn9,et0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,



Analog Devices HMC349ALP4CE
v01.0314
Insertion Loss
0
-1
-2
-3
-4
-5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
+25C
+85C
-40C
Isolation Between
Ports RFC and RF1 / RF2
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
RF1 RF2 ALL OFF
0.1 and 1 dB Input Compression Point
36
34
32
30
28
26
24
22
20
0
123
FREQUENCY (GHz)
4
0.1 dB Compression Point
1 dB Compression Point
HMC349ALP4CE
High Isolation SPDT
Non-Reflective Switch, DC - 4 GHz
Return Loss
0
-5
-10
-15
-20
-25
-30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
RFC
RF1, RF2 ON
RF1, RF2 OFF
Note: RFC is reflective in “all off” state.
Isolation Between Ports RF1 and RF2
0
-10
-20
-30
-40
-50
-60
-70
-80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
RFC-RF1 ON
RFC-RF2 ON
Input Third Order Intercept Point
64
60
56
52
48
44
40
0
123
FREQUENCY (GHz)
4
+25C
+85C
-40C
IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9eAreicowist7etspihssipe8usepfsop-lbeularr2.neioicdtSlcp5iseepeaevu0rreetstcya-deioinofo3,iycfrtnno3atdophtria4eboeSftienoer3rsrnursaetasspc:noupcyrbpeHujipcernFoaatcifirttvttareieetnttnoixg:aottecnew:rPmhdign9aeeMhhnrn7rtegssotls.8eiiaocnobwf-frel2Aiepoth:n.5aowatH9ue0lotona7g-wntsv38oDeotevi3e-crev2eo7riC,.ct5h3eNneos0oor. r-p3oFOPA3Oohprn4arrope3dntlpiTieecorei:aorcnc7treihO,8o,n1n2naod-S3lp-eoE2lulgpiil9vpniysez-pe4rW@aoy7arb,a0hty:tae0i,Pntwt•Ptdhhi.wOtoOetDnor.w.decrB:epi.ovo1hrlax-emoi8ctn9,et0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,
2



Analog Devices HMC349ALP4CE
v01.0314
HMC349ALP4CE
High Isolation SPDT
Non-Reflective Switch, DC - 4 GHz
Absolute Maximum Ratings
RF Input Power (Vdd/Vctl = +5V)
(0.25 - 4 GHz)
Through Path
+33.6 dBm (T = 85 °C)
+28 dBm (T = 125 °C)
+26.5 dBm (T = 85 °C)
Termination Path +21 dBm (T = 125 °C)
Supply Voltage Range (Vdd)
Control Voltage Range (Vctl)
Hot Switch Power Level
(Vdd = +5V)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 14.9 mW/°C for through
path, 6.9 mW/°C for termination
path above 85 °C)
+7 Vdc
-1V to Vdd +1V
+30 dBm (T = 85 °C)
+25 dBm (T = 125 °C)
150 °C
Through Path 0.969 W
Termination Path 0.451 W
Thermal Resistance
Through Path 67.1 °C/W
Termination Path 144.2 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
ESD Sensitivity (HBM)
-40 to +125 °C
All pins Class 1A
Vdd to ground 350V
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest
transmission frequency.
Bias Voltage & Current
Vdd
(Vdc)
+5.0
Vdd Range = +5.0 Vdc ± 10%
Idd (Typ.)
(mA)
1.0
Idd (Max.)
(mA)
3.5
TTL/CMOS Control Voltages
State
Low
High
Bias Condition
0 to +0.8 Vdc @ <1 µA Typical
+2.0 to +5.0 Vdc @ 35 µA Typical
Truth Table
Control Input
Vctl EN
Low Low
High
Low
Low High
High
High
Signal Path State
RFC - RF1
RFC - RF2
OFF
ON
ON OFF
OFF
OFF
OFF
OFF
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9eAreicowist7etspihssipe8usepfsop-lbeularr2.neioicdtSlcp5iseepeaevu0rreetstcya-deioinofo3,iycfrtnno3atdophtria4eboeSftienoer3rsrnursaetasspc:noupcyrbpeHujipcernFoaatcifirttvttareieetnttnoixg:aottecnew:rPmhdign9aeeMhhnrn7rtegssotls.8eiiaocnobwf-frel2Aiepoth:n.5aowatH9ue0lotona7g-wntsv38oDeotevi3e-crev2eo7riC,.ct5h3eNneos0oor.r-p3oFOPA3Oohprn4arrope3dntlpiTieecorei:aorcnc7treihO,8o,n1n2naod-S3lp-eoE2lulgpiil9vpniysez-pe4rW@aoy7arb,a0hty:tae0i,Pntwt•Ptdhhi.wOtoOetDnor.w.decrB:epi.ovo1hrlax-emoi8ctn9,et0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)