SP4T Switch. HMC641ALP4E Datasheet

HMC641ALP4E Switch. Datasheet pdf. Equivalent

HMC641ALP4E Datasheet
Recommendation HMC641ALP4E Datasheet
Part HMC641ALP4E
Description GaAs Nonreflective SP4T Switch
Feature HMC641ALP4E; Data Sheet 0.1 GHz to 20 GHz GaAs, Nonreflective, SP4T Switch HMC641ALP4E FEATURES Broadband frequ.
Manufacture Analog Devices
Datasheet
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Analog Devices HMC641ALP4E
Data Sheet
0.1 GHz to 20 GHz
GaAs, Nonreflective, SP4T Switch
HMC641ALP4E
FEATURES
Broadband frequency range: 0.1 GHz to 20 GHz
Nonreflective 50 Ω design
Low insertion loss: 3.0 dB at 20 GHz
High isolation: 40 dB at 20 GHz
High input linearity at 250 MHz to 20 GHz
P1dB: 24 dBm typical
IP3: 41 dBm typical
High power handling
26.5 dBm through path
23 dBm terminated path
Integrated 2 to 4 line decoder
24-lead, 4 mm × 4 mm LFCSP package
ESD rating: 250 V (Class 1A)
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military radios, radars, and electronic counter measures (ECMs)
Broadband telecommunications systems
FUNCTIONAL BLOCK DIAGRAM
HMC641ALP4E
24 23 22 21 20 19
NIC 1
GND 2
RFC 3
GND 4
NIC 5
NIC 6
50Ω
50Ω
18 NIC
17 GND
16 CTRLA
15 CTRLB
14 VSS
13 NIC
7 8 9 10 11 12
PACKAGE
BASE
GND
NIC = NOT INTERNALLY CONNECTED
Figure 1.
GENERAL DESCRIPTION
The HMC641ALP4E is a general-purpose, nonreflective, single-
pole, four-throw (SP4T) switch manufactured using a gallium
arsenide (GaAs) process. This switch offers high isolation, low
insertion loss, and on-chip termination of the isolated ports.
The switch operates with a negative supply voltage range of −5 V to
−3 V and requires two negative logic control voltages.
The HMC641ALP4E includes an on-chip, binary 2 to 4 line
decoder that provides logic control from two logic input lines.
The HMC641ALP4E comes in a 4 mm × 4 mm, 24-lead LFCSP
package and operates from 0.1 GHz to 20 GHz.
Rev. B
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Analog Devices HMC641ALP4E
HMC641ALP4E
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
Power Derating Curves................................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
REVISION HISTORY
8/2018—Rev. A to Rev. B
Changes to Insertion Loss, Between RFC and RF1 to RF4 (On)
Parameter, Table 1............................................................................. 3
Changed Reflow (MSL1 Rating) to Reflow, Table 2..................... 4
Deleted Note 2, Table 2; Renumbered Sequentially..................... 4
Updated Outline Dimensions ....................................................... 11
Changes to Ordering Guide .......................................................... 11
7/2017—Rev. 00.1013 to Rev. A
This Hittite Microwave Products data sheet has been reformatted to
meet the styles and standards of Analog Devices, Inc.
Changes to Features Section, Applications Section, General
Description Section, and Figure 1 .................................................. 1
Deleted Truth Table, Bias Voltage and Current Table, and
TTL/CMOS Control Voltages Table .............................................. 3
Changes to Table 1............................................................................ 3
Data Sheet
Interface Schematics .....................................................................5
Typical Performance Charcteristics ................................................6
Insertion Loss, Return Loss, and Isolation ................................6
Input Power Compression and IP3.............................................7
Theory of Operation .........................................................................8
Application Information...................................................................9
Evaluation Board ...........................................................................9
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
Added Power Derating Curves Section and Figure 2;
Renumbered Sequentially ................................................................4
Changes to Table 2.............................................................................4
Added Figure 4...................................................................................5
Changes to Figure 3, Table 3, and Figure 5 ....................................5
Deleted GND Interface Schematic..................................................5
Changes to Typical Performance Characteristics Section ...........6
Added Theory of Operation Section and Table 4; Renumbered
Sequentially ........................................................................................8
Added Applications Information Section and Figure 14 .............9
Changes to Table 5.............................................................................9
Added Figure 16 ............................................................................. 10
Updated Outline Dimensions....................................................... 11
Changes to Ordering Guide .......................................................... 11
Rev. B | Page 2 of 11



Analog Devices HMC641ALP4E
Data Sheet
HMC641ALP4E
SPECIFICATIONS
VSS = −3 V or −5 V, VCTRL = 0 V or VSS, TCASE = 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Symbol Test Conditions/Comments
Min Typ Max Unit
FREQUENCY RANGE
f
0.1 20 GHz
INSERTION LOSS
Between RFC and RF1 to RF4 (On)
0.1 GHz to 12 GHz
2.0 3.2 dB
12 GHz to 20 GHz
3.0 4.2 dB
ISOLATION
Between RFC and RF1 to RF4 (Off )
0.1 GHz to 12 GHz
30 42
dB
12 GHz to 20 GHz
30 40
dB
RETURN LOSS
RFC and RF1 to RF4 (On)
0.1 GHz to 12 GHz
18 dB
12 GHz to 20 GHz
17
RF1 to RF4 (Off )
0.1 GHz to 20 GHz
13 dB
SWITCHING
Rise and Fall Time
tRISE, tFALL 10% to 90% of radio frequency (RF)
output
30
ns
On and Off Time
tON, tOFF 50% VCTL to 90% of RF output
100 ns
INPUT LINEARITY 1
250 MHz to 20 GHz
1 dB Power Compression
P1dB
VSS = −5 V
20 24
dBm
VSS = −3 V
22 dBm
Third-Order Intercept
IP3 10 dBm per tone, 1 MHz spacing
VSS = −5 V
VSS = −3 V
41 dBm
41 dBm
SUPPLY
Voltage
Current
VSS pin
VSS
ISS
−5 −3 V
1.7 5
mA
DIGITAL CONTROL INPUTS
CTRLA and CTRLB pins
Voltage
VCTL
Low
VINL VSS = −5 V
−3 0 V
VSS = −3 V
−1 0 V
High
VINH VSS = −5 V
−5 −4.2 V
VSS = −3 V
−3 −2.2 V
Current
Low
High
ICTL
IINL
IINH
30 µA
0.5 µA
1 Input linearity performance degrades at frequencies less than 250 MHz.
Rev. B | Page 3 of 11







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