SPDT Switch. HMC349AMS8G Datasheet

HMC349AMS8G Switch. Datasheet pdf. Equivalent

HMC349AMS8G Datasheet
Recommendation HMC349AMS8G Datasheet
Part HMC349AMS8G
Description SPDT Switch
Feature HMC349AMS8G; Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G FEATURES .
Manufacture Analog Devices
Datasheet
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Analog Devices HMC349AMS8G
Data Sheet
High Isolation, Nonreflective,
GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349AMS8G
FEATURES
Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad
(MINI_SO_EP)
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
GENERAL DESCRIPTION
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-
morphic high electron mobility transistor (PHEMT), single-pole,
double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure
applications by yielding high isolation of 57 dB, low insertion
loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB
of 34 dBm.
FUNCTIONAL BLOCK DIAGRAM
RF2
HMC349AMS8G
VDD
RFC
50Ω
EN
CTRL
50Ω GND
RF1
Figure 1.
The HMC349AMS8G operates with a single positive supply
voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible
control interface.
The HMC349AMS8G comes in an 8-lead mini small outline
package with an exposed pad.
Rev. C
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Analog Devices HMC349AMS8G
HMC349AMS8G* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC349AMS8G Evaluation Board
DOCUMENTATION
Data Sheet
HMC349AMS8G: High Isolation, Nonreflective, GaAs, SPDT
Switch,100 MHz to 4 GHz Data Sheet
TOOLS AND SIMULATIONS
HMC349AMS8GE S-Parameters
REFERENCE MATERIALS
Quality Documentation
Semiconductor Qualification Test Report: PHEMT-J (QTR:
2013-00285)
DESIGN RESOURCES
HMC349AMS8G Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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Analog Devices HMC349AMS8G
HMC349AMS8G
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ........................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 5
REVISION HISTORY
12/2016—Rev. B to Rev.
Change to Frequency Range Parameter, Table 1 .......................... 3
10/2016—Rev. 01.0214 to Rev. B
This Hittite Microwave Products data sheet has been reformatted to
meet the styles and standards of Analog Devices, Inc.
Changes to Features Section............................................................ 1
Changes to Table 2............................................................................ 4
Changes to Theory of Operation Section...................................... 8
Updated Outline Dimensions ....................................................... 10
Changes to Ordering Guide .......................................................... 10
Data Sheet
Typical Performance Characterics ..................................................6
Insertion Loss, Return Loss, and Isolation ................................6
Input Power Compression and Third-Order Intercept (IP3).......7
Theory of Operation .........................................................................8
Applications Information .................................................................9
Evaluation Board ...........................................................................9
Outline Dimensions ....................................................................... 10
Ordering Guide............................................................................... 10
Rev. C | Page 2 of 10







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