Double-Balanced Mixer. HMC213AMS8 Datasheet

HMC213AMS8 Mixer. Datasheet pdf. Equivalent

HMC213AMS8 Datasheet
Recommendation HMC213AMS8 Datasheet
Part HMC213AMS8
Description GaAs MMIC SMT Double-Balanced Mixer
Feature HMC213AMS8; HMC213AMS8 / 213AMS8E v02.1210 GaAs MMIC SMT DoubleBalanced Mixer, 1.5 - 4.5 GHz 10 Typical Appl.
Manufacture Analog Devices
Datasheet
Download HMC213AMS8 Datasheet




Analog Devices HMC213AMS8
HMC213AMS8 / 213AMS8E
v02.1210
GaAs MMIC SMT Double-
Balanced Mixer, 1.5 - 4.5 GHz
10
Typical Applications
The HMC213AMS8(E) is ideal for:
• Base Stations
• PCMCIA Transceivers
• Wireless Local Loop
Features
Ultra Small Package: MSOP8
Conversion Loss: 8.5 dB
LO / RF Isolation: 40 dB
Functional Diagram
General Description
The HMC213AMS8(E) is a ultra miniature double-
balanced mixer in 8 lead plastic surface mount
package (MSOP). This passive MMIC mixer is
constructed of GaAs Schottky diodes and novel
planar transformer baluns on the chip. The device can
be used as an upconverter, downconverter, biphase
(de)modulator, or phase comparator. The consistent
MMIC performance will improve system operation and
assure regulatory compliance.
Electrical Specifications, TA = +25° C, As a Function of LO Drive
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
1 dB Gain Compression (Input)
Min.
29
27
16
7
LO = +13 dBm
IF = 100 MHz
Typ.
1.5 - 4.5
DC - 1.5
8.5
8.5
40
35
19
10
Max.
10
10
LO = +10 dBm
IF = 100 MHz
Min. Typ.
1.7 - 3.6
DC - 1.5
9
9
32 40
26 35
14 18
58
Max.
10.5
10.5
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
10 - 1
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Analog Devices HMC213AMS8
HMC213A* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC213AMS8 Evaluation Board
DOCUMENTATION
Data Sheet
HMC213A Data Sheet
TOOLS AND SIMULATIONS
HMC213A S-Parameters
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: MESFET-F (QTR:
2013-00247)
DESIGN RESOURCES
HMC213A Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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SAMPLE AND BUY
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number.
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Analog Devices HMC213AMS8
v02.1210
Conversion Gain vs.
Temperature @ LO = +13 dBm
0
-5
-10
-15
-40 C
+25 C
+85 C
-20
1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
-5
-10
-15
+9 dBm
+11 dBm
+15 dBm
-20
1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
IF Bandwidth @ LO = +13 dBm
0
-5
-10
-15
-20
0
LO=1.8 GHz, RF=1.9 to 4.9 GHz
LO=4.4 GHz, RF=1.3 to 4.3 GHz
0.5 1 1.5
FREQUENCY (GHz)
2
HMC213AMS8 / 213AMS8E
GaAs MMIC SMT Double-
Balanced Mixer, 1.5 - 4.5 GHz
Isolation @ LO = +13 dBm
0
RF/IF
-10 LO/IF
LO/RF
-20
-30
-40
-50
-60
1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
Return Loss @ LO = +13 dBm
0
-5
-10
-15
RF
IF
LO
-20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
P1dB vs. Temperature @ LO = +13 dBm
16
15
14
13
12
11
10 -40 C
+25 C
9 +85 C
8
1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
10
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10 - 2







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