FUNDAMENTAL MIXER. HMC554ALC3B Datasheet

HMC554ALC3B MIXER. Datasheet pdf. Equivalent

HMC554ALC3B Datasheet
Recommendation HMC554ALC3B Datasheet
Part HMC554ALC3B
Description GaAs MMIC FUNDAMENTAL MIXER
Feature HMC554ALC3B; MIXERS - SINGLE & DOUBLE BALANCED - SMT Preliminary v00.1115 Typical Applications The HMC554ALC3B i.
Manufacture Analog Devices
Datasheet
Download HMC554ALC3B Datasheet




Analog Devices HMC554ALC3B
v00.1115
Typical Applications
The HMC554ALC3B is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military End-Use
Functional Diagram
HMC554ALC3B
GaAs MMIC FUNDAMENTAL
MIXER, 11 - 20 GHz
Features
High LO/RF Isolation: 46 dB
Passive Double Balanced Topology
Low Conversion Loss: 7 dB
Wide IF Bandwidth: DC - 6 GHz
Robust 1,000V ESD, Class 1C
12 Lead Ceramic 3x3mm SMT Package: 9mm2
General Description
The HMC554ALC3B is a general purpose
double balanced mixer in a leadless RoHS
compliant SMT package that can be used as an
upconverter or downconverter between 11 and
20 GHz. This mixer is fabricated in a GaAs MESFET
process, and requires no external components or
matching circuitry. The HMC554ALC3B provides
excellent LO to RF and LO to IF isolation due to
optimized balun structures. The RoHS compliant
HMC554ALC3B eliminates the need for wire
bonding, and is compatible with high volume surface
mount manufacturing techniques.
Electrical Specifications, TA = +25° C, IF= 100 MHz, LO= +13 dBm*
Parameter
Min. Typ. Max. Min. Typ.
Frequency Range, RF & LO
12 - 16
Frequency Range, IF
DC - 6
Conversion Loss
79
Noise Figure (SSB)
79
LO to RF Isolation
40 46
LO to IF Isolation
34 40
RF to IF Isolation
18 25
IP3 (Input)
18
IP2 (Input)
48
1 dB Gain Compression (Input)
11
*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.
11 - 20
DC - 6
8
8
40 46
30 40
15 25
18
45
11
Max.
11
11
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
1 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D



Analog Devices HMC554ALC3B
v00.1115
Absolute Maximum Ratings
RF / IF Input
LO Drive
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 2.32 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+25 dBm
+25 dBm
150 °C
150 mW
431 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
Outline Drawing
HMC554ALC3B
GaAs MMIC FUNDAMENTAL
MIXER, 11 - 20 GHz
MxN Spurious Outputs
nLO
mRF
0
1
2
3
0 xx 19 25 xx
1 29 0 51 55
2 81 85 60 88
3 xx 97 98 76
4 xx xx 105 98
RF = 15.1 GHz @ -10 dBm
LO = 15.0 GHz @ +13 dBm
All values in dBc below the IF output power level.
4
xx
xx
104
99
105
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING:
30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM
NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK,
OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
InFfoorrmaptiroincefu,rndisehelidvebryyA, naanlodg Dtoevpicleasciseboerlideveedrst:oAbne aalcocguraDteeavnidcereslia,bIlne.cH.,owOenveer, Tneo chFnoorlopgriyceW, adye,livPe.Ory,. Banodx t9o1p0l6a,ceNoorrdweorso:dA, nMalAog02D0e6vi2c-e9s1, 0In6c.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimearedtpdmlbictyaraayAtdiorneenamsluooalrgtrkofDrstoheamevrreicwitetsihsseuefsopeurr.noidtSpsepePurretshcyaeinofo,iycfnnatoAphetriaeop:ftinoer7psrnreta8slsinou1cpyrbe-ajipcen3tatcfii2rvttoieent9nongot-ecwr4Smhigna7euehnn0rtpgssts.0epoowfo•fAiptrhnOatoa:tuelroPtndgnthseoDootriecrnvoeoi.ectnheN:elsoir1.n-e8OPAa0hpnt0opew-nlAiTweceN:awc7tAih8o.Lna1nOon-S3laoG2uglo9p-yD-gp4Wo.7cra0toy:0m,P•Ph.OoOnr.deB:eo1r x-o8n90l1i0n0-e6A,aNNtAwoLrwOwwGoo.-adDn,aMloAg.0c2o0m62-9106
2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)