NOISE AMPLIFIER. HMC716ALP3E Datasheet

HMC716ALP3E AMPLIFIER. Datasheet pdf. Equivalent

HMC716ALP3E Datasheet
Recommendation HMC716ALP3E Datasheet
Part HMC716ALP3E
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER
Feature HMC716ALP3E; LOW NOISE AMPLIFIERS - SMT Preliminary v04.0316 Typical Applications The HMC716ALP3E is ideal for: .
Manufacture Analog Devices
Datasheet
Download HMC716ALP3E Datasheet




Analog Devices HMC716ALP3E
v04.0316
Typical Applications
The HMC716ALP3E is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC716ALP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Features
Noise Figure: 1 dB
Gain: 18 dB
Output IP3: +33 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC716ALP3E is a GaAs pHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC716ALP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifications
TA = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1]
Parameter
Vdd = +3V
Min. Typ. Max.
Vdd = +5V
Min. Typ.
Frequency Range
3.1 - 3.9
3.1 - 3.9
Gain
13 17
15.5
18
Gain Variation Over Temperature
0.01
0.01
Noise Figure
1 1.3
1
Input Return Loss
25 30
Output Return Loss
13 16
Output Power for 1 dB Compression (P1dB)
12 15
16 19
Saturated Output Power (Psat)
16.5
20.5
Output Third Order Intercept (IP3)
26 33
Supply Current (Idd)
41 55
65
[1] Rbias resistor sets current, see application circuit herein
Max.
1.3
90
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
1 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D



Analog Devices HMC716ALP3E
v04.0316
HMC716ALP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
Vdd (V)
Rbias (Ω)
Idd (mA)
Min Max Recommended
2.2k 20
3V
2k [1]
Open Circuit
5.6k
30
47k 41
270 48
5V
0
Open Circuit
820
65
2.2k 81
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 11.1 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5V
+10 dBm
150 °C
0.72 W
90 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Supply Voltage
(Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V)
Vdd (V)
Idd (mA)
2.7 31
3.0 41
3.3 51
4.5 51
5.0 65
5.5 80
Note: Amplifier will operate over full voltage ranges shown above.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2



Analog Devices HMC716ALP3E
v04.0316
Outline Drawing
HMC716ALP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC716ALP3E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 [2]
Package Marking [3]
716
XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
3
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D







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