Operational Amplifier. NJM8801 Datasheet

NJM8801 Amplifier. Datasheet pdf. Equivalent

NJM8801 Datasheet
Recommendation NJM8801 Datasheet
Part NJM8801
Description High Quality Audio Dual Operational Amplifier
Feature NJM8801; NJM8801 High Quality Audio Dual Operational Amplifier ■GENERAL DESCRIPTION The NJM8801 is a high qu.
Manufacture New Japan Radio
Datasheet
Download NJM8801 Datasheet




New Japan Radio NJM8801
NJM8801
High Quality Audio Dual Operational Amplifier
GENERAL DESCRIPTION
The NJM8801 is a high quality audio dual operational Amplifier with
bipolar technology, strikes a balance between “MUSES technology”
and mass-production technique.
The original process tuning and the assembly technology, based on
MUSES technology, make excellent sound and absorbing cost
increases.
The characteristics like Low noise (4.5nV/Hz), Wide Bandwidth
(15MHz) and low distortion (0.0005%) suitable for audio preamplifiers,
active filters, and line amplifiers.
NJM8801 packages are SOP8 JEDEC 150 mil and small SSOP8 with
copper frame.
PACKAGE OUTLINE
NJM8801E
(SOP8 JEDEC 150 mil)
NJM8801VA3
(SSOP8)
FEATURES
Operating Voltage
Low Noise Voltage
Low Distortion
Wide GB
Slew Rate
Input Offset Voltage
Input Bias Current
Voltage Gain
Bipolar Technology
Package Outline
±2V to ±18V
4.5nV/Hz typ.
0.8uVrms typ. (RIAA)
0.0005% typ.
15MHz typ.
5V/µs typ.
0.3mV typ. 3mV max.
100nA typ. 500nA max.
110dB typ.
PIN CONFIGURATION
(Top View)
18
2A
7
3 B6
45
SOP8 JEDEC 150 mil, SSOP8-A3 (copper frame)
PIN FUNCTION
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
EQUIVALENT CIRCUIT ( 1/2 Shown )
V+
-INPUT
+INPUT
OUTPUT
V-
Ver.2014-11-10
-1-



New Japan Radio NJM8801
NJM8801
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
VDD ±18
V
Common Mode Input Voltage Range
VICM
±15 (Note1)
V
Differential Input Voltage Range
Power Dissipation
VID ±30 V
PD
SOP8 JEDEC 150 mil: 550 (Note2)
SSOP8: 460 (Note2)
mW
Operating Temperature Range
TOPR
-40~+85
ºC
Storage Temperature Range
TSTG
-40~+125
ºC
(Note 1) For supply Voltages less than ±15V, the maximum input voltage is equal to the Supply Voltage.
(Note 2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4).
Refer to the following Power Dissipation and Ambient Temperature.
RECOMMENDED OPERATING CONDITION (Ta=25ºC)
PARAMETER
SYMBOL
TEST CONDITION
Supply Voltage
V+/V-
MIN. TYP. MAX. UNIT
±2 - ±18 V
ELECTRIC CHARACTERISTICS
DC CHARACTERISTICS (V+/V-=±15V, Vcm=0V, Ta=25ºC, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
Supply Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage
Common Mode Input Voltage Range
(Note3) Written by the absolute rate.
ICC
VIO
IB
IIO
AV
CMR
SVR
VOM
VICM
RL=, No Signal
Rs10k(Note3)
(Note3)
RL2k, Vo=±10V, Rs10k
VICM=±12V, Rs10k
V+/V-=±9.0 to ±18V, Rs10k
RL2k
CMR80dB
-
-
-
-
90
80
80
±12
±12
TYP.
6
0.3
100
5
110
110
110
±13.5
±13.5
MAX.
9
3
500
200
-
-
-
-
-
UNIT
mA
mV
nA
nA
dB
dB
dB
V
V
AC CHARACTERISTICS (V+/V-=15V, Vcm=0V, Ta=25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
Slew Rate
Gain Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Voltage
Equivalent Input Noise Voltage
Total Harmonic Distortion
Channel Separation
SR
GB
en
VNI
VNI
THD
CS
RL2k
f=10kHz
RS=100, f=1KHz
RIAA, RS=2.2k, 30kHz, LPF, NJM8801VA3
RIAA, RS=2.2k, 30kHz, LPF, NJM8801E
f=1kHz ,AV=+10, Vo=5Vrms, RL=2k
f=1kHz , AV=-100, RS=1k, RL=2k
-
-
-
-
-
-
-
TYP.
5
15
4.5
0.8
0.8
0.0005
130
MAX.
-
-
-
-
1.4
-
-
UNIT
V/us
MHz
nV/Hz
μVrms
μVrms
%
dB
-2-
Ver.2014-11-10



New Japan Radio NJM8801
NJM8801
Application Notes
Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation PD. The dependence PD on ambient temperature is shown in Fig 1. The plots are depended on following
two points. The first is PD on ambient temperature 25ºC, which is the maximum power dissipation. The second is 0W, which
means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage
temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD lower than 25ºC to it
on 25ºC. The PD is shown following formula as a function of the ambient temperature between those points.
Dissipation Power PD =
Tjmax - Ta
ja
[W] (Ta=25ºC to Ta=Tjmax)
Where, θja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on IC is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage V+/V-) X (Supply Current Icc) – (Output Power Po)
This IC should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
800
700
600 SOP8
500
400 SSOP8-A3
300
200
100
0
-15 5 25
45 65 85 105 125
Ta (°C)
Fig.1 Power Dissipations vs. Ambient Temperature
Ver.2014-11-10
-3-







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