GaAs MMIC. NJG1806K75 Datasheet

NJG1806K75 MMIC. Datasheet pdf. Equivalent

NJG1806K75 Datasheet
Recommendation NJG1806K75 Datasheet
Part NJG1806K75
Description SPDT SWITCH GaAs MMIC
Feature NJG1806K75; NJG1806K75 SPDT SWITCH GaAs MMIC I GENERAL DESCRIPTION The NJG1806K75 is a 1bit control SPDT switc.
Manufacture New Japan Radio
Datasheet
Download NJG1806K75 Datasheet




New Japan Radio NJG1806K75
NJG1806K75
SPDT SWITCH GaAs MMIC
I GENERAL DESCRIPTION
The NJG1806K75 is a 1bit control SPDT switch IC
suited for switching transmit/receive signals at 802.11
a/b/g/n/ac applications.
The NJG1806K75 features low insertion loss, high
isolation, and high handling power down to 1.8V control
voltage at high frequency up to 6GHz.
This switch has ESD protection devices to achieve
excellent ESD performances. And the ultra small and
ultra thin package of DFN6-75 is adopted.
I PACKAGE OUTLINE
NJG1806K75
I APPLICATION
-802.11 a/b/g/n/ac networks applications
-Transmit / receive switching, antenna switching and others switching applications
I FEATURES
G Low control voltage
VCTL(H)=1.8V typ.
G Voltage operation
VDD=3.3V typ.
G Low insertion loss
0.35dB typ. @f=2.4 to 2.5GHz
0.40dB typ. @f=4.9 to 5.9GHz
G High isolation
25dB typ. @f=2.4 to 2.5GHz
25dB typ. @f=4.9 to 5.9GHz
G P-1dB
P-1dB=31 dBm typ. @f=2.5GHz
G Ultra small & ultra thin package
P-1dB=31 dBm typ. @f=5.9GHz
DFN6-75 (Package Size: 1.0x1.0x0.375mm typ.)
G RoHS compliant and Halogen Free, MSL1
I PIN CONFIGURATION
(Top view)
Pin connection
1. P1
2. GND
3. P2
4. VCTL
5. PC
6. VDD
I TRUTH TABLE
“H”=VCTL(H), “L”=VCTL(L)
ON PATH
PC-P1
PC-P2
VCTL
H
L
NOTE: Please note that any data or drawing in this catalog is subject to change.
Ver.2015-03-16
-1-



New Japan Radio NJG1806K75
I ABSOLUTE MAXIMUM RATINGS
PARAMETER
RF Input Power
Supply Voltage
SYMBOL
CONDITIONS
PIN
VDD =3.3V,
ON State Port
VDD
Control Voltage
VCTL
Power Dissipation
4-layer FR4 PCB
PD without through-hole
(76.2x114.3mm), Tj=150°C
Operating Temperature Topr
Storage Temperature
Tstg
NJG1806K75
Ta=+25°C, ZS=Zl=50
RATINGS UNITS
31 dBm
6.0 V
6.0 V
430 mW
-40 to +105
-55 to +150
°C
°C
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
(General conditions: Ta=+25°C, with application circuit)
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Supply Voltage
VDD
Operating Current
IDD No RF input, VDD=3.3V
Control Voltage (HIGH) VCTL(H)
Control Voltage (LOW) VCTL(L)
Control Current
ICTL VCTL(H)=1.8V
2.5 3.3 5.0
V
- 15 30 µA
1.35
1.8
5.0
V
0 - 0.45 V
- 3 10 µA
-2-



New Japan Radio NJG1806K75
NJG1806K75
I ELECTRICAL CHARACTERISTICS2 (RF CHARACTERISTICS)
(General conditions: VDD=3.3V, VCTL(H)=1.8V, VCTL(L)=0V, Ta=+25°C, ZS=Zl=50, with application circuit)
PARAMETERS SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Insertion loss1
LOSS1 f=2.4 to 2.5GHz
- 0.35 0.55 dB
Insertion loss2
LOSS2 f=4.9 to 5.9GHz
- 0.40 0.60 dB
Isolation1
ISL1 f=2.4 to 2.5GHz
23 25 - dB
Isolation2
ISL2 f=4.9 to 5.9GHz
23 25 - dB
Return loss1
RL1 f=2.4 to 2.5GHz
18 28 - dB
Return loss2
Input power at 1dB
compression point1
Input power at 1dB
compression point2
Switching time
RL2 f=4.9 to 5.9GHz
P-1dB1 f=2.4 to 2.5GHz
P-1dB2
TSW
f=4.9 to 5.9GHz
50% VCTL to 10%/90% RF
15 20 - dB
29 31
- dBm
28 31
- dBm
-
150 300
ns
-3-







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