GaAs MMIC. NJG1129MD7 Datasheet

NJG1129MD7 MMIC. Datasheet pdf. Equivalent

NJG1129MD7 Datasheet
Recommendation NJG1129MD7 Datasheet
Part NJG1129MD7
Description UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
Feature NJG1129MD7; NJG1129MD7 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC I GENERAL DESCRIPTION The NJG1129MD7 is a low no.
Manufacture New Japan Radio
Datasheet
Download NJG1129MD7 Datasheet




New Japan Radio NJG1129MD7
NJG1129MD7
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1129MD7 is a low noise amplifier GaAs MMIC
designed for mobile digital TV application (470~770 MHz).
This IC has a LNA pass-through function to select high
gain mode or low gain mode by single bit control.
Also, the ESD protection circuit is integrated into the IC to
achieve high ESD tolerance.
I APPLICATIONS
Wide band application from 470MHz to 770MHz
Mobile TV and Digital TV applications
Mobile phone and tablet PC applications
I PACKAGE OUTLINE
NJG1129MD7
I FEATURES
G Low voltage operation
G Low voltage control
G Package
+2.8V typ.
+1.85V typ.
EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
[High gain mode]
G Low current consumption
G High gain
G Low noise figure
G High input IP3
[Low gain mode]
G Low current consumption
G Gain
G High input IP3
5.0mA typ.
15.0dB typ.
1.4dB typ.
+1.0dBm typ.
16µA typ.
-4.0dB typ.
+20.0dBm typ.
I PIN CONFIGURATION
(Top
11 10
9
Bypass circuit
12
LNA circuit
13 Bias
circuit
Logic
14 circuit
8
7
6
5
12 3 4
Pin Connection
1. GND
8. GND
2. GND
9. GND
3. VINV
10. GND
4. GND
11. GND
5. GND
12. RFIN
6. GND
13. GND
7. RFOUT
14. VCTL
* Exposed PAD: GND
I TRUTH TABLE
VCTL
H
L
“H”=VCTL(H), “L”=VCTL(L)
LNA Mode
High Gain mode
Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-24
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New Japan Radio NJG1129MD7
NJG1129MD7
I ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
CONDITIONS
Ta=+25°C, Zs=Zl=50 ohm
RATINGS UNITS
Drain voltage
VDD
5.0 V
Inverter voltage
VINV
5.0 V
Control voltage
VCTL
5.0 V
Input power
Power dissipation
Operating temperature
Pin VDD=VINV=2.8V
PD
4-layer FR4 PCB with through-hole
(74.2x74.2mm), Tj=150°C
Topr
+15
1300
-40~+85
dBm
mW
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
General conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating voltage
VDD
2.3 2.8 3.6
V
Inverter voltage
VINV
2.3 2.8 3.6
V
Control voltage (High)
VCTL(H)
1.5 1.85 3.6
V
Control voltage (Low)
VCTL(L)
0 0 0.3 V
Operating current1
IDD1 RF OFF, VCTL=1.85V
- 5.0 8.0 mA
Operating current2
IDD2 RF OFF, VCTL=0V
- 1 5 µA
Inverter current1
IINV1 RF OFF, VCTL=1.85V
- 90 180 µA
Inverter current2
IINV2 RF OFF, VCTL=0V
- 15 40 µA
Control current
ICTL RF OFF, VCTL=1.85V
- 5 10 µA
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New Japan Radio NJG1129MD7
NJG1129MD7
I ELECTRICAL CHARACTERISTICS2 (High Gain mode)
General conditions: VDD=VINV=2.8V, VCTL=1.85V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating frequency
fRF
470 620 770 MHz
Small signal gain1
Gain1
Noise figure
Input power at 1dB gain
compression point1
Input 3rd order
intercept point1
NF
P-1dB(IN)1
IIP3_1
Exclude PCB & connector
losses*1
f1=fRF, f2=fRF+100kHz,
PIN=-25dBm
RF IN VSWR1
VSWRi1
11.0
-
-14.0
-6.0
-
15.0
1.4
-6.0
+1.0
1.5
19.0 dB
1.9 dB
- dBm
- dBm
4.5 -
RF OUT VSWR1
VSWRo1
- 1.5 2.8 -
I ELECTRICAL CHARACTERISTICS3 (Low Gain mode)
General conditions: VDD=VINV=2.8V, VCTL=0V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating frequency
fRF
470 620 770 MHz
Small signal gain2
Gain2
Exclude PCB & connector
losses*2
-6.0
-4.0
-
dB
Input power at 1dB gain
compression point2
P-1dB(IN)2
+5.0 +12.0 - dBm
Input 3rd order
intercept point2
IIP3_2
f1=fRF, f2=fRF+100kHz,
PIN=-12dBm
+14.0 +20.0 - dBm
RF IN VSWR2
VSWRi2
- 1.5 3.0 -
RF OUT VSWR2
VSWRo2
- 1.5 2.8
*1 Input PCB and connector losses: 0.036dB(at 470MHz), 0.053dB(at 770MHz)
*2 Input & output PCB and connector losses: 0.072dB(at 470MHz), 0.105dB(at 770MHz)
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