2SA1620. A1620 Datasheet
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Audio Frequency Amplifier Applications
Complementary to 2SC4209
Absolute Maximum Ratings (Ta = 25°C)
Collector power dissipation
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
Electrical Characteristics (Ta = 25°C)
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
V (BR) CEO IC = −5 mA, IB = 0
VCE = −2 V, IC = −50 mA
VCE = −2 V, IC = −200 mA
IC = −200 mA, IB = −20 mA
VCE = −2 V, IC = −5 mA
VCE = −10 V, IC = −10 mA
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification, O: 70~140, Y: 120~240
Weight: 0.012 g (typ.)
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 ⎯ 240
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