Power Transistor. BDX88 Datasheet

BDX88 Transistor. Datasheet pdf. Equivalent

BDX88 Datasheet
Recommendation BDX88 Datasheet
Part BDX88
Description Silicon PNP Darlington Power Transistor
Feature BDX88; isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= .
Manufacture Inchange Semiconductor
Datasheet
Download BDX88 Datasheet




Inchange Semiconductor BDX88
isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A
-80V(Min)- BDX88B; -100V(Min)- BDX88C
·Complement to Type BDX87/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDX88
-45
BDX88A
-60
VCBO
Collector-Base Voltage
BDX88B
-80
BDX88C -100
BDX88
-45
VCEO
Collector-Emitter
Voltage
BDX88A
-60
BDX88B
-80
BDX88C -100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-12
ICM
Collector Current-Peak
-18
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-200
120
200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.45 /W
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Inchange Semiconductor BDX88
isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX88
-45
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX88A
BDX88B
IC= -50mA; IB= 0
-60
-80
V
BDX88C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -120mA
-3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
-4.0
V
VBE(on)
ICBO
Base-Emitter On Voltage
BDX88
Collector
Cutoff Current
BDX88A
BDX88B
BDX88C
BDX88
IC= -6A; VCE= -3V
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TC= 150
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150
VCE= -22V; IB= 0
-2.8
V
-0.5
-5.0
-0.5
-5.0
-0.5
mA
-5.0
-0.5
-5.0
ICEO
Collector
Cutoff Current
BDX88A
BDX88B
VCE= -30V; IB= 0
VCE= -40V; IB= 0
-1.0
mA
BDX88C VCE= -50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -5A; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -6A; VCE= -3V
750
18000
hFE-3
DC Current Gain
IC= -12A; VCE= -3V
100
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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