isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·C...
isc Silicon
PNP Darlington Power
Transistor
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
·Complement to Type BDX87/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX88
-45
BDX88A
-60
VCBO
Collector-Base Voltage
BDX88B
-80
BDX88C -100
BDX88
-45
VCEO
Collector-Emitter Voltage
BDX88A
-60
BDX88B
-80
BDX88C -100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-12
ICM
Collector Current-Peak
-18
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-200 120 200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V A A mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.45 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
BDX88/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX88
-45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDX88A BDX88B
IC= -50mA; IB= 0
-60 -80
V
BDX88C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA
-2.0
V
VCE(sat)-2 Collector-...