Effect Transistor. Si2307 Datasheet

Si2307 Transistor. Datasheet pdf. Equivalent

Si2307 Datasheet
Recommendation Si2307 Datasheet
Part Si2307
Description P-Channel Enhancement Mode Field Effect Transistor
Feature Si2307; Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design fo.
Manufacture SiPU
Datasheet
Download Si2307 Datasheet




SiPU Si2307
Si2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON)
Rugged and reliable
Simple drive requirement
SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-4.0A
80@ VGS=-4.5V
100 @ VGS=-2.5V
NOTE The Si2307is available in
a lead-free package
D
S
G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª
Maximum Power Dissipationª
Operating Junction and Storage
Temperature Range
unless otherwise noted
Symbol
VDS
VGS
ID
Limit
-20
±12
-4.0
IDM -12
IS -1.25
PD 1.25
TJ,TSTG
-55 to 150
Unit
V
V
A
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
100
/W
1



SiPU Si2307
Si2307
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DAYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V,ID=-250µA
VDS=-16V,VGS=0V
VGS=±10V,VDS=0V
-20
1
±100
V
µA
nA
VGS(th)
RDS(ON)
FS
VDS=VGS,ID=-250µA
VGS=-4.5V,ID=-4.0A
VGS=-2.5V,ID=-2.0A
VGS=-5V,ID=-5A
-0.5 -0.8 -1.5 V
80 95
m
100 125
5S
CISS
COSS
CRSS
VDS=-10V,VGS=0V
f=1.0MHZ
586 pF
101 pF
59 pF
tD(ON)
tr
tD(OFF)
tf
Q
Qs
Qd
VDD=-10V
ID=-4.0A,
VGEN=-4.5V
RL=10ohm
RGEN=6ohm
VDS=-10V,ID=-3A
VGS=-4.5V
6.5 ns
32.1 ns
58.4 ns
48 ns
6 nC
1.35 nC
1.5 nC
2



SiPU Si2307
Si2307
ELECTRICAL CHARACTERICS (TA=25 unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V,IS=-1.25A
-0.81 -1.2 V
Notes
a. Surface Mounted on FR4 Board, t 10sec
b. Pulse Test: Pulse Width 300Us, Duty 2
c. Guaranteed by design, not subject to production testing.
-VGS=2.5V
-VGS=10.5~3.5V
-VGS=1.5V
VGS=-4.5V
ID=-4A
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)