Effect Transistor. SI2307 Datasheet

SI2307 Transistor. Datasheet pdf. Equivalent

SI2307 Datasheet
Recommendation SI2307 Datasheet
Part SI2307
Description P-Channel Enhancement Mode Field Effect Transistor
Feature SI2307; MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download SI2307 Datasheet




MCC SI2307
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SI2307
Features
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
TrenchFET Power MOSFET
Marking Code: S7
P-Channel
Enhancement Mode
Field Effect Transistor
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IS
VGS
PD
RθJA
TJ
TSTG
Parameter
Drain-source Voltage
Continuous Drain Current
Continuous Source-Drain Diode Current
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
-30
-2.7
-0.91
±20
1.1
114
-55 to +150
-55 to +150
Unit
V
A
A
V
W
/W
Internal Block Diagram
D
G
S
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2016/03/23



MCC SI2307
SI2307
Electrical characteristics (Ta=25oC unless otherwise noted)
Parameter
Symbol Test Condition
Static
Drain-Source Breakdown Voltage
V (BR)DSS VGS = 0V, ID =-250µA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancec
Forward Transconductancec
Dynamicd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS =VGS, ID =-250µA
VDS =0V, VGS =±20V
VDS =-30V, VGS =0V
VDS =-30V, VGS =0V, TJ=55
VGS =-4.5V, ID =-2.5A
VGS =-10V, ID =-3.5A
VDS =-10V, ID =-3.5A
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS =-15V,VGS =0V,f =1MHz
VDS =-15V,VGS =-4.5V,
ID =-2.5A
f =1MHz
VDD=-15V,
RL=15, ID =-1A,
VGEN=-4.5V,Rg=1
Drain-source Body diode characteristics
Body Diode Voltage
VSD
IS=-0.75A, ,VGS =0
Notes:
a. t=5s.
b. Surface mounted on 1” ×1” FR4 board.
c. Pulse Test : Pulse Width < 300µs, Duty Cycle 2%.
d. Guaranteed by design, not subject to production testing.
MCC
R
Micro Commercial Components
Min Typ Max Unit
-30
V
-1 -3
±100 nA
-1
µA
-10
0.110 0.138
0.073 0.088
7S
340
67 pF
51
4.1 6.2
1.3 nC
1.8
10
40 60
40 60
20 40
ns
17 30
-0.8 -1.2
V
Revision: A
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2016/03/23



MCC SI2307
SI2307
-20
T =25
a
Pulsed
-16
-12
-8
-4
Output Characteristics
V =-10V,-8V,-6V
GS
V =-4.5V
GS
V =-4.0V
GS
V =-3.5V
GS
V =-3.0V
GS
-0
-0 -1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE V (V)
DS
300
T =25
a
Pulsed
250
RDS(ON) —— ID
-5
200
V =-4.5V
GS
150
V =-10V
100 GS
50
-0 -4 -8 -12 -16 -20
DRAIN CURRENT I (A)
D
-10
T =25
a
Pulsed
IS —— VSD
-1
MCC
R
Micro Commercial Components
-10
T =25
a
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0
500
400
-1 -2 -3 -4
GATE TO SOURCE VOLTAGE V (V)
GS
-5
RDS(ON) —— VGS
T =25
a
Pulsed
300
I =-3.5A
D
200
100
0
-0 -4 -8 -12 -16 -20
GATE TO SOURCE VOLTAGE V (V)
GS
-0.1
-0.01
-0.0
Revision: A
-0.3 -0.6 -0.9 -1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
-1.5
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2016/03/23







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