D-S MOSFET. Si2307CDS Datasheet

Si2307CDS MOSFET. Datasheet pdf. Equivalent

Si2307CDS Datasheet
Recommendation Si2307CDS Datasheet
Part Si2307CDS
Description P-Channel 30-V (D-S) MOSFET
Feature Si2307CDS; New Product P-Channel 30-V (D-S) MOSFET Si2307CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(o.
Manufacture Vishay
Datasheet
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Vishay Si2307CDS
New Product
P-Channel 30-V (D-S) MOSFET
Si2307CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.088 at VGS = - 10 V
0.138 at VGS = - 4.5 V
TO-236
(SOT-23)
ID (A)a, b
- 2.7
- 2.2
Qg (Typ.)
4.1 nC
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
G1
S2
3D
Top View
Si2307CDS (N7)*
* Marking Code
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source-Drain Diode Currenta, b
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa, b
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c
Limit
- 30
± 20
- 3.5
- 2.8
- 2.7a, b
- 2.2a, b
- 12
- 1.5
- 0.91a, b
1.8
1.14
1.1a, b
0.7a, b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
90
55
Maximum
115
70
Unit
°C/W
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
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Vishay Si2307CDS
Si2307CDS
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3.5 A
VGS = - 4.5 V, ID = - 2.5 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 3.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 0.75 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
-1
-6
Typ.
Max.
Unit
- 32
4.5
0.073
0.110
7
-3
- 100
-1
- 10
0.088
0.138
V
mV/°C
V
nA
µA
A
Ω
S
340
67
51
4.1
1.3
1.8
10
40
40
20
17
5.5
13
17
7.7
- 0.8
17
11
12
5
6.2
60
60
40
30
10
25
30
15
- 1.5
- 12
- 1.2
30
20
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68768
S-81580-Rev. A, 07-Jul-08



Vishay Si2307CDS
New Product
Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
VGS = 10 thru 6 V
10
8
VGS = 5 V
VGS = 4 V
2.0
1.5
6
4
2
0
0.0
0.20
VGS = 3 V
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.5
0.0
1.0
600
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
0.15
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0.00
0 3 6 9 12
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 2.5 A
8
6
4
VDS = 15 V
VDS = 7.5 V
VDS = 22.5 V
2
0
0246
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
8
450
Ciss
300
150 Coss
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.8
ID = 3.2 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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