N-Channel MOSFET. 4N60I Datasheet

4N60I MOSFET. Datasheet pdf. Equivalent

4N60I Datasheet
Recommendation 4N60I Datasheet
Part 4N60I
Description N-Channel MOSFET
Feature 4N60I; 4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect T.
Manufacture HAOHAI
Datasheet
Download 4N60I Datasheet





HAOHAI 4N60I
4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
工业型号
FQU4N60
FQD4N60
公司型号 通俗命名
H
H4N60I
H4N60S
4N60 HAOHAI
封装
标识
N-Channel Power Field Effect Transistoe 英文与中文简体版本
无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准
TO-251 TO-252
IS
包装规格
TO-251管装
TO-252盘装
每管数量 每盒数量
80Pcs 4000Pcs
每卷2.5K 5000Pcs
每箱数量
40000Pcs
50000Pcs
  Description
  This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently.
  This new high energy device also offers a drain-to-source diode
with fast recovery time.
  Designed for high voltage, high speed switching applications such
as power suplies, converters, power motor controls and bridge circuits.
  Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
  产品特点及应用范围:4N60型硅N沟道VDMOS功率晶体管,主要
用于开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、各种
充电器、整流器、逆变器、控制器、转换器、风扇控制板、以及电源适
配器、汽车稳压器等线性放大和功率开关电路。其特点如下:
● 开关速度快     ● 驱动简单
● 可并联使用     ● 通态电阻低
● 封装形式:TO-251IPAK);TO-252DPAK
4N60 Series Pin Assignment
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
2
3
1
3-Lead Plastic TO-252
Package Code: S
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
4N60 Series
Symbol:
Absolute Maximum Ratings
Symbol
Parameter
ID
IDM
VGSS
PD
Drain to Current (Continuous)(TC=25°C)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Power Dissipation (TA=25°C) *
Power Dissipation (TC=25°C) *
Power Dissipation - Derate above 25°C
Tj, Tstg
Operating and Storage Temperature Range
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction to Ambient
Value
4
15
±30
3.13
130
1.04
-55+150
460
300
Units
A
V
W
W/°C
°C
mJ
°C
Typ Max
Units
-- 0.96
-- 40 W/°C
-- 62.5
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HAOHAI ELECTRONICS CO., LTD.
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4N60 TO-251 & TO-252



HAOHAI 4N60I
N-Channel Power Field Effect Transistoe 英文与中文简体版本
4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Off Characteristics
Symbol
Characteristic
Min. Typ. Max.
Unit
V(BR)DSS
ΔBVDSS/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Breakdown Voltage Temperature Coefficient
(ID=250μA, Referenced to 25°C)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (VGS=-±30V, VDS=0V)
600
--
--
--
--
--
--
0.95
--
--
--
--
--
--
10
100
100
±100
V
V/°C
µA
nA
On Characteristics
Symbol
Characteristic
Min. Typ. Max.
Unit
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=1.95A)
Forward Transconductance (VDS=50V, ID=1.95A)
3.0 --
5.0
-- 2.8 3.6
-- 3.8 --
V
S
Dynamic Characteristics
Symbol
Characteristic
Min. Typ. Max.
Unit
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V
f=1MHz
-- 680 880
-- 75 100
-- 8.6 12
pF
Switching Characteristics
Symbol
Characteristic
Min. Typ. Max.
Unit
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Turn-On Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=400V, ID=3.9A
RG=25, VGS=10V
VDS=640V
ID=3.9A, VGS=10V
-- 16 40
-- 45 100
nS
-- 35 80
-- 35 80
-- 19 25
-- 4.2 --
nC
-- 9.1 --
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Characteristic
Min. Typ. Max.
Unit
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS=0V, IS=3.9A
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, IS=3.9A
dIF/dt=100A/μs
Pulse Test: Pulse Width 300us, Duty Cycle2%
-- --
4
-- -- 15
-- -- 1.4
-- 575 --
-- 3.65
--
A
V
nC
μC
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
Page No.: 2/5
tw@szhhe.com
4N60 TO-251 & TO-252



HAOHAI 4N60I
4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
N-Channel Power Field Effect Transistoe 英文与中文简体版本
无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准
TO-251 Dimension  (TO-251 or IPAK 半塑封 封装尺寸数据)
单位: mm
元件打印标识
型号: 4N60
型号: 4: 4A
型号: N: N沟道
型号: 60: 600V
批号: H1129
批号: H: 浩海电子
批号: 11: 2011
批号: 29: 29
 按实际出厂日期
管脚排列, 从左至右
 G-D-S
 G: Gate
 D: Drain
 S: Source
MILLIMETERS
DIM Min. Max.
A 5.97 6.35
B 6.35 6.73
C 2.19 2.38
D 0.69 0.88
E 0.46 0.58
F 0.94 1.14
G 2.29 BSC
H 0.87 1.01
J 0.46 0.58
K 8.89 9.65
R 4.45 5.45
S 0.63 1.01
V 0.89 1.27
Z 3.93 ---
装箱规格:管装,每管80只,每盒4000只,每箱40000
TO-252 (DPAK) DimensionTO-252 or DPAK 片式表面贴 封装尺寸数据)
单位: mm
元件打印标识
MILLIMETERS
型号: 4N60
DIM Min. Max.
型号: 4: 4A
A 5.97 6.22
型号: N: N沟道
B 6.35 6.73
型号: 60: 600V
C 2.19 2.38
批号: H1135
批号: H: 浩海电子
批号: 11: 2011
批号: 35: 35
 按实际出厂日期
管脚排列, 从左至右
D
E
F
G
H
0.69 0.88
0.46 0.58
0.94 1.09
2.29 BSC
0.87 1.01
 G-D-S
J 0.46 0.58
 G: Gate
K 2.10 2.41
 D: Drain
R 4.57 5.46
D
 S: Source
V 0.89 1.27
W 0.00 0.25
装箱规格:载带卷盘装,每卷2500只,每盒5000只,每箱50000
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
Page No.: 3/5
tw@szhhe.com
4N60 TO-251 & TO-252





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