N-Channel MOSFET. FQU4N60 Datasheet

FQU4N60 MOSFET. Datasheet pdf. Equivalent

FQU4N60 Datasheet
Recommendation FQU4N60 Datasheet
Part FQU4N60
Description 600V N-Channel MOSFET
Feature FQU4N60; FQU4N60 600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET Features • 2.6A, 600V @TJ = 25°C • Typ..
Manufacture Fairchild Semiconductor
Datasheet
Download FQU4N60 Datasheet




Fairchild Semiconductor FQU4N60
FQU4N60
600V N-Channel MOSFET
Features
2.6A, 600V @TJ = 25°C
Typ. RDS(on) = 1.0Ω
Low gate charge (typical 12.8nC)
Low effective output capacitance (typ ical 32pF)
100% avalanche tested
Improved dv/dt capability
November 2002
QFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
Minimize on-state resistance,provide superior switching
Performance, and withstand high energy pulse in the
Avalanche and commutation mode. These devices are well
Suited for high efficiency switch mode power supply,power
Factor correction, electronic lamp ballast on half bridge.
D
GDS
I-PAK
FQU Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002Fairchild Semiconductor Corporation
FQU4N60 Rev. A
1
G
S
FQU4N60
600
2.6
1.64
11
± 30
180
2.6
4.5
4.5
50
0.4
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQU4N60
2.7
110
Unit
°C/W
°C/W
www.fairchildsemi.com



Fairchild Semiconductor FQU4N60
Package Marking and Ordering Information
Device Marking
FQU4N60
FQU4N60C
Device
FQU4N60TU
FQU4N60CTU
Package
IPAK
IPAK
Tape Size
Tape Width
Quantity
5040
5040
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
Conditions
VGS = 0V, ID = 250μA, TJ = 25°C
VGS = 0V, ID = 250μA, TJ = 150°C
ID = 250μA, Referenced to 25°C
Min
600
--
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID =2.6A
--
IDSS Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 1.3A
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
VDS = 40V, ID = 1.3A
VDS = 25V, VGS = 0V,
f = 1.0MHz
(Note 4)
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300V, ID = 3.4A
RG = 25Ω
VDS = 480V, ID = 3.4A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 2.6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 3.4A
dIF/dt =100A/μs
(Note 4)
Notes:
1. Repetitive Ratin g: Pulse width limited by maximum junction temperature
2. IAS = 1.3, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 3.4, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Units
--
650
0.38
-- V
-- V
-- V/°C
650 -- V
-- 1 μA
-- 10 μA
-- 100 nA
--
-100
nA
-- 5.0 V
1.0 1.2 Ω
2.6 -- S
415 540 pF
210 275 pF
19.5 -- pF
12 16 pF
32 -- pF
16
45
36
30
12.8
2.4
7.1
45
100
85
70
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
--
--
--
277
2.07
2.6
11
1.4
--
--
A
A
V
ns
μC
FQU4N60 Rev. A
2 www.fairchildsemi.com



Fairchild Semiconductor FQU4N60
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
10 Top : 15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
0.1
0.1
* Notes :
1. 250μs Pulse Test
2. TC = 25 oC
1 10
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
* Note
1. VDS = 40V
2. 250μs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4
3
VGS = 10V
2
VGS = 20V
1
o
* Note : TJ = 25 C
0
0.0 2.5 5.0 7.5 10.0 12.5
ID, Drain Current [A]
101
100
10-1
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8
VSD , Source-Drain Voltage [V]
1.0
1.2
Figure 5. Capacitance Characteristics
1200
1000
800
600
400
200
0
010
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
10 1
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
10
8
6
4
2
0
0
VDS = 120V
VDS = 300V
VDS = 480V
* Note : ID = 3.9A
5 10
QG, Total Gate Charge [nC]
15
FQU4N60 Rev. A
3 www.fairchildsemi.com







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