CMOS RAM. HM-6516-883 Datasheet

HM-6516-883 RAM. Datasheet pdf. Equivalent

HM-6516-883 Datasheet
Recommendation HM-6516-883 Datasheet
Part HM-6516-883
Description 2K x 8 CMOS RAM
Feature HM-6516-883; TM HM-6516/883 March 1997 2K x 8 CMOS RAM Features Description • This Circuit is Processed in A.
Manufacture Intersil Corporation
Datasheet
Download HM-6516-883 Datasheet




Intersil Corporation HM-6516-883
TM HM-6516/883
March 1997
2K x 8 CMOS RAM
Features
Description
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max
• Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max
• Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max
• Industry Standard Pinout
• Single Supply . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V VCC
• TTL Compatible
• Static Memory Cells
• High Output Drive
• On-Chip Address Latches
• Easy Microprocessor Interfacing
The HM-6516/883 is a CMOS 2048 x 8 Static Random
Access Memory. Extremely low power operation is achieved
by the use of complementary MOS design techniques. This
low power is further enhanced by the use of synchronous cir-
cuit techniques that keep the active (operating) power low,
which also gives fast access times. The pinout of the HM-
6516/883 is the popular 24 pin, 8-bit wide JEDEC Standard
which allows easy memory board layouts, flexible enough to
accommodate a variety of PROMs, RAMS, EPROMs, and
ROMs.
The HM-6516/883 is ideally suited for use in microprocessor
based systems. The byte wide organization simplifies the
memory array design, and keeps operating power down to a
minimum because only one device is enabled at a time. The
address latches allow very simple interfacing to recent gen-
eration microprocessors which employ a multiplexed
address/data bus. The convenient output enable control also
simplifies multiplexed bus interfacing by allowing the data
outputs to be controlled independent of the chip enable.
Ordering Information
120ns
HM1-6516B/883
HM4-6516B/883
200ns
HM1-6516/883
-
TEMPERATURE RANGE PACKAGE PKG. NO.
-55oC to 125oC
CERDIP F24.6
-55oC to +125oC
CLCC
J32.A
Pinouts
HM-6516/883
(CERDIP)
TOP VIEW
HM-6516/883
(CLCC)
TOP VIEW
A7 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
DQ0 9
DQ1 10
DQ2 11
GND 12
24 VCC
23 A8
22 A9
21 W
20 G
19 A10
18 E
17 DQ7
16 DQ6
15 DQ5
14 DQ4
13 DQ3
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 NC
A3 8
26 W
A2 9
25 G
A1 10
24 A10
A0 11
23 E
NC 12
22 DQ7
DQ0 13
21 DQ6
14 15 16 17 18 19 20
PIN DESCRIPTION
NC No Connect
A0 - A10 Address Inputs
E Chip Enable/Power Down
VSS/GND Ground
DQ0 - DQ7 Data In/Data Out
VCC Power (+5V)
W Write Enable
G Output Enable
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
173
FN2999.1



Intersil Corporation HM-6516-883
Functional Diagram
HM-6516/883
A10
A9
A8
A7
A6
A5
A4
G
W
E
A
7
LATCHED
ADDRESS
REGISTER
A
GATED
ROW
DECODER
128
7
128 x 128
MATRIX
L G 16 16 16 16 16 16 16 16
G GATED COLUMN
DECODER
8
44
AA
L LATCHED ADDRESS
REGISTER
A3 A2 A1 A0
1 OF 8
A
A
DQ0
THRU
8 DQ7
174



Intersil Corporation HM-6516-883
HM-6516/883
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input or Output Voltage Applied for all Grades. . . . . . . GND -0.3V to
VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
48θoJCA/W
8oθCJC/W
CLCC Package . . . . . . . . . . . . . . . . . . 66oC/W
12oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25953 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.4V to VCC
Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . 2.0V to 4.5V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max
TABLE 1. HM-6516/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
MIN MAX
High Level
Output Voltage
VOH
VCC = 4.5V
IO = -1.0mA
1, 2, 3
-55oC TA +125oC 2.4
-
Low Level
Output Voltage
VOL
VCC = 4.5V
IO = 3.2mA
1, 2, 3
-55oC TA +125oC
-
0.4
High Impedance
Output Leakage
Current
IIOZ
VCC = G = 5.5 V,
VIO = GND or VCC
1, 2, 3
-55oC TA +125oC -1.0
1.0
Input Leakage
Current
II VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55oC TA +125oC -1.0
1.0
Operating Supply
Current
ICCOP VCC = G = 5.5V, (Note 2)
f = 1MHz, VI = GND or VCC
1, 2, 3
-55oC TA +125oC
-
10
Standby Supply
Current
ICCSB1
VCC = 5.5V, HM-6516/883
E = VCC-0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55oC TA +125oC
-
100
VCC = 5.5V, HM-6516B/883
E = VCC -0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55oC TA +125oC
-
50
Data Retention
Supply Current
ICCDR
VCC = 2.0V, HM-6516/883
E = VCC-0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55oC TA +125oC
-
50
VCC = 2.0V, HM-6516B/883
E = VCC-0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55oC TA +125oC
-
25
Functional Test
FT VCC = 4.5V (Note 3)
7, 8A, 8B
-55oC TA +125oC
-
-
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
3. Tested as follows: f = 2MHz, VIH = 2.4V, VIL = 0.4V, IOH = -4.0mA, IOL = 4.0mA, VOH 1.5V, and VOL 1.5V.
UNITS
V
V
µA
µA
mA
µA
µA
µA
µA
-
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