Mode MOSFET. FBM85N80P Datasheet

FBM85N80P MOSFET. Datasheet pdf. Equivalent

FBM85N80P Datasheet
Recommendation FBM85N80P Datasheet
Part FBM85N80P
Description N-Channel Enhancement Mode MOSFET
Feature FBM85N80P; FBM85N80P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 80V/90A RDS(ON) = 7.0 mΩ (typ.) @ V.
Manufacture FBM
Datasheet
Download FBM85N80P Datasheet




FBM FBM85N80P
FBM85N80P/B
FBM@
N-Channel Enhancement Mode MOSFET
Features
80V/90A
RDS(ON) = 7.0 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Switching application
Power Management for Inverter Systems.
Pin Description
DS
G
TO-220FB-3L
D
DS
G
TO-263-2L
G N-Channel MOSFET
Ordering and Marking Information
S
P
FBM85N80
YYÿ XXXJWW G
B
FBM85N80
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L B : TO-263-2L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: FBM lead-free products contain molding compounds/die attach materials and 100% matte tin plate termin-
ation finish; which are fully compliant with RoHS. FBM lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. FBM defines “Green” to mean
lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material
and total of Br and Cl does not exceed 1500ppm by weight).
FBM reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to ob tain th e l atest version of rel evant inf ormation to verif y b ef ore pl acing ord ers.
1 150623



FBM FBM85N80P
FBM85N80P/B
FBM@
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
80
±25
175
-55 to 175
90
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=100°C
TC=25°C
TC=100°C
336**
90
68
210
105
0.71
62.5
EAS Avalanche Energy, Single Pulsed
L=0.5mH
530***
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=64V
Electrical Characteristics
(T
C
=
25°C
Unless
Otherwise
Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250µA
VDS=80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=45A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=45A, VGS=0V
ISD=45A, dlSD/dt=100A/µs
FBM85N80
Min. Typ. Max.
80 -
-
- -1
- - 10
234
- - ±100
- 7.0 8.0
- 0.8 1
- 64 -
- 128 -
Unit
V
µA
V
nA
m
V
ns
nC
2



FBM FBM85N80P
FBM85N80P/B
FBM@
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=40V, RG = 5 ,
IDS =45A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=64V, VGS=10V,
IDS=45A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
.
FBM85N80
Min. Typ. Max.
- 3.0 -
- 3800 -
- 389 -
- 250 -
- 25 49
- 42 78
- 61 102
- 21 34
- 86 -
- 16 -
- 28 -
Unit
pF
ns
nC
3







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