MOS FET. MSN0620Z Datasheet

MSN0620Z FET. Datasheet pdf. Equivalent

MSN0620Z Datasheet
Recommendation MSN0620Z Datasheet
Part MSN0620Z
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN0620Z; MSN0620Z 60V(D-S) N-Channel Enhancement Mode Power MOS FET Genera Features ● VDS =60V,ID =20A RDS(O.
Manufacture MORESEMI
Datasheet
Download MSN0620Z Datasheet




MORESEMI MSN0620Z
MSN0620Z
60V(D-S) N-Channel Enhancement Mode Power MOS FET
Genera Features
VDS =60V,ID =20A
RDS(ON) <44m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0620Z
MSN0620Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100)
ID
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
IDM
PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
20
14
45
30
0.2
72
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
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MORESEMI MSN0620Z
MSN0620Z
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
5 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
60 -
-
V
- - 1 μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=10A
- - ±100 nA
1.2 2.0
- 37
2.5
44
V
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=5V,ID=4.5A
11 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 500
-
PF
VDS=30V,VGS=0V,
Coss
- 60
-
PF
F=1.0MHz
Crss
- 25
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=6.7
VGS=10V,RG=3
-5
- 2.6
- 16.1
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 2.3
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 14
VDS=30V,ID=4.5A,
Qgs - 2.9
VGS=10V
Qgd - 5.2
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=20A
-
1.2 V
IS
- - 20
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF =20A
- 35
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 53
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
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MORESEMI MSN0620Z
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
MSN0620Z
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http://www.moresemi.com
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