MOS FET. MSN0675D Datasheet

MSN0675D FET. Datasheet pdf. Equivalent

MSN0675D Datasheet
Recommendation MSN0675D Datasheet
Part MSN0675D
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN0675D; MSN0675D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =75A RDS.
Manufacture MORESEMI
Datasheet
Download MSN0675D Datasheet




MORESEMI MSN0675D
MSN0675D
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =60V,ID =75A
RDS(ON) < 11.5m@ VGS=10V
(Typ:9.1m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0675D
MSN0675D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100)
ID
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
IDM
PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
75
50
300
110
0.73
450
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN0675D
MSN0675D
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60 68
-
--
1
- - ±100
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=25V,ID=30A
23
- 9.1
20 -
4
11.5
-
V
m
S
Clss
- 2350
-
PF
VDS=25V,VGS=0V,
Coss
- 237
-
PF
F=1.0MHz
Crss
- 205
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
- 16
VDD=30V,ID=2A,RL=15- 10
VGS=10V,RG=2.5
- 45
- 12
VDS=30V,ID=30A,
VGS=10V
- 50
- 12
- 16
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=30A
- - 1.2
V
IS
--
75
A
trr
TJ = 25°C, IF =75A
- 28
Qrr
di/dt = 100A/μs(Note3)
- 49
nS
nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN0675D
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
MSN0675D
MORE Semiconductor Company Limited
http://www.moresemi.com
3/6







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