MOS FET. MSN0860Z Datasheet

MSN0860Z FET. Datasheet pdf. Equivalent

MSN0860Z Datasheet
Recommendation MSN0860Z Datasheet
Part MSN0860Z
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN0860Z; MSN0860Z 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V;ID=60A@ VGS=10V; RDS.
Manufacture MORESEMI
Datasheet
Download MSN0860Z Datasheet




MORESEMI MSN0860Z
MSN0860Z
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
VDS=75VID=60A@ VGS=10V
RDS(ON)<8.5m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Lead Free
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
Schematic diagram
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0860Z
MSN0860Z
TO-251-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
60
42
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
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MORESEMI MSN0860Z
MSN0860Z
Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
1.05
50
Unit
/W
/W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VDS=75V,VGS=0V
75 84
--
--
-
1
10
V
μA
μA
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=30A
- - ±100 nA
23
4
- 6.8 8.5
V
m
Dynamic Characteristics
Forward Transconductance
gFS VDS=5V,ID=30A
66 -
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4400
340
260
-
-
-
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=30A,
Qgs
VGS=10V
Qgd
100 -
20 -
30 -
nC
nC
nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 17.8
- 11.8
- 56
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 14.6
-
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
- - 80
A
Pulsed Source-drain current(Body Diode)
Forward on voltage(Note 1)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
ISDM - - 320 A
VSD
Tj=25,ISD=30A,VGS=0V
- - 1.2
V
trr
- - 36 nS
Tj=25,IF=75A,di/dt=100A/μs
Qrr - - 56 nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes
1.Pulse Test: Pulse Width 300μs, Duty Cycle 1.5%, RG=25, Starting Tj=25
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MORESEMI MSN0860Z
Test Circuit
1) EAS test circuit
2) Gate charge test circuit
3) Switch Time Test Circuit
MSN0860Z
MORE Semiconductor Company Limited
http://www.moresemi.com
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