MSN0880H

MSN0880H 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ） ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply PIN Configuration Lead Free Marking and pin assignment TO-247 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0880H MSN0880H TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(T...