MOS FET. MSN0880H Datasheet

MSN0880H FET. Datasheet pdf. Equivalent

MSN0880H Datasheet
Recommendation MSN0880H Datasheet
Part MSN0880H
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN0880H; MSN0880H 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =80A RD.
Manufacture MORESEMI
Datasheet
Download MSN0880H Datasheet




MORESEMI MSN0880H
MSN0880H
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS = 75V,ID =80A
RDS(ON) <8m@ VGS=10VTyp6.5m
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-247 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880H
MSN0880H
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
75
±25
80
60
320
180
30
1.2
600
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN0880H
MSN0880H
Thermal Characteristic
Thermal Resistance,Junction-to- Case (Note 2)
RθJc 0.83 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
75 84
--
-
1
V
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±25V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=30A
- - ±100 nA
2 2.85
- 6.5
4
8
V
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=5V,ID=30A
- 66
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 4400
-
PF
VDS=25V,VGS=0V,
Coss
- 340
-
PF
F=1.0MHz
Crss
- 260
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 17.8
- 11.8
- 56
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 14.6
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
- 100
-
nC
VDS=24V,ID=40A,
Qgs
- 20
-
nC
VGS=10V
Qgd
- 30
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=40A
- - 1.2
V
IS
--
80
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 75A
- 35.6
50
nS
Qrr
di/dt = 100A/μs(Note3)
- - 56 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.3mH, ID=62A
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN0880H
Test circuit
1EAS test Circuits
2Gate charge test Circuit:
3Switch Time Test Circuit
MSN0880H
MORE Semiconductor Company Limited
http://www.moresemi.com
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