MOS FET. MSN7002 Datasheet

MSN7002 FET. Datasheet pdf. Equivalent

MSN7002 Datasheet
Recommendation MSN7002 Datasheet
Part MSN7002
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN7002; MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A.
Manufacture MORESEMI
Datasheet
Download MSN7002 Datasheet




MORESEMI MSN7002
MSN7002
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS = 60V,ID = 0.115A
RDS(ON) < 3@ VGS=5V
RDS(ON) < 2@ VGS=10V
Lead free product is acquired
Surface mount package
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids,lamps, hammers,display,
memories, transistors, etc.
Battery operated systems
Solid-state relays
Lead Free
PIN Configuration
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN7002
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
625 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN7002
MSN7002
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
IS
Condition
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=5V, ID=0.05A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
VDS=30V,VGS=0V,
F=1.0MHz
VDD=30V,ID=0.2A
VGS=10V,RGEN=10
VDS=10V,ID=0.115A,
VGS=4.5V
VGS=0V,IS=0.115A
Min Typ Max Unit
60 68
--
-
1
- - ±100
V
μA
nA
1 1.7
- 1.3
- 1.1
0.08 -
2.5
3
2
-
V
S
- 20
- 10
- 3.6
50
20
5
PF
PF
PF
- 10
- 50
- 17
- 10
- 1.7
-
-
-
-
3
nS
nS
nS
nS
nC
- - 1.2
V
-
- 0.115
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN7002
MSN7002
Typical Electrical and Thermal Characteristics
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
td(on)
VOUT
S VIN
10%
ton toff
tr
td(off)
tf
90%
INVERTED
10%
90%
10%
90%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Figure 3 Output Characteristics
Vgs Gate-Source Voltage (V)
Figure 4 Transfer Characteristics
ID- Drain Current (A)
Figure 5 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 6 Rdson vs Vgs
MORE Semiconductor Company Limited
http://www.moresemi.com
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