MOS FET. MSN7002Z Datasheet

MSN7002Z FET. Datasheet pdf. Equivalent

MSN7002Z Datasheet
Recommendation MSN7002Z Datasheet
Part MSN7002Z
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN7002Z; MSN7002Z 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RD.
Manufacture MORESEMI
Datasheet
Download MSN7002Z Datasheet




MORESEMI MSN7002Z
MSN7002Z
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =700V,ID =2A
RDS(ON) <6.5 @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Lead Free
Application
Power switching application
Hard switched and high frequency circuits
Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7002Z
MSN7002Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
700
±30
2
1.25
8
28
0.20
120
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
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MORESEMI MSN7002Z
MSN7002Z
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
4.46 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=700V,VGS=0V
700 -
--
-
25
V
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=1.0A
- - ±100
2-
- 5.5
4
6.5
nA
V
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=40V,ID=1.0A
- 1.5
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 290
-
PF
VDS=25V,VGS=0V,
Coss
- 31
-
PF
F=1.0MHz
Crss - 9 - PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
- 10
tr VDD=300V,ID=2A,RL=25- 25
td(off)
VGS=10V,RG=2.5
- 24
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 26
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=560V,I D=2A,
Qgs
VGS=10V
Qgd
- 14.5
- 1.8
- 8.3
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=2.0A
-
1.4 V
IS - - 2.0 A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 2.0A
- 380
Qrr
di/dt = 100A/μs(Note3)
- 0.9
nS
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: j=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN7002Z
Typical Electrical and Thermal Characteristics (Curves)
MSN7002Z
Fig1 Typical Output Characteristics, Tc=25
Fig2 Typical Output Characteristics, Tc=150
Fig3 Normalized Resistance Vs. Temperature
Fig4 Typical Source-Drain Diode Forward Voltage
Fig5 Maximum Drain Current Vs. Case Temperature
Fig6 Maximum Safe Operating Area
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