N-Channel Enhancement Mode Power MOS FET
MSN7007F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =7A RDS(ON) <1.5 Ω @ VGS=1...
Description
MSN7007F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =7A RDS(ON) <1.5 Ω @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7007F
MSN7007F
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power ...
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