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FM28V020

Cypress Semiconductor

256-Kbit (32 K x 8) F-RAM Memory

FM28V020 256-Kbit (32 K × 8) F-RAM Memory 256-Kbit (32 K × 8) F-RAM Memory Features ■ 256-Kbit ferroelectric random acc...


Cypress Semiconductor

FM28V020

File Download Download FM28V020 Datasheet


Description
FM28V020 256-Kbit (32 K × 8) F-RAM Memory 256-Kbit (32 K × 8) F-RAM Memory Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 32 K × 8 SRAM pinout ❐ 70-ns access time, 140-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ❐ Resistant to negative voltage undershoots ■ Low power consumption ❐ Active current 5 mA (typ) ❐ Standby current 90 A (typ) ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ Packages: ❐ 28-pin small outline integrated circuit (SOIC) pack...




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