FM28V100

FM28V100 1-Mbit (128 K × 8) F-RAM Memory 1-Mbit (128 K × 8) F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30 ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 128 K × 8 SRAM pinout ❐ 60-ns access time, 90-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ■ Low power consumption ❐ Active current 7 mA (typ) ❐ Standby current 90 A (typ) ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C Logic Block Diagram ■ 32-pin thin small outline package (TSOP) Type I ■ Restriction of hazardo...