CY14V116N

CY14V116N 16-Mbit (1024 K × 16) nvSRAM Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 30-ns and 45-ns access times ❐ Logically organized as 1024 K × 16 ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A ❐ Sleep mode current of 10 A ■ Operating voltage ❐ Core VCC = 2.7 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V ■ Industrial temperature: –40 C to +85 C ■ 165-ball fine-pitch ball grid array (FBGA) package ■ Restriction of hazardous substances (RoHS) compliant Functional Description The Cypress CY14V...