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S34MS04G1

Cypress Semiconductor

SLC NAND Flash

S34MS01G1 S34MS02G1 S34MS04G1 1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded Distinctive Characteristi...


Cypress Semiconductor

S34MS04G1

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Description
S34MS01G1 S34MS02G1 S34MS04G1 1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded Distinctive Characteristics  Density – 1 Gb / 2 Gb / 4 Gb  Architecture – Input / Output Bus Width: 8 bits / 16 bits – Page size: – ×8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – ×16 = 1056 (1024 + 32) words; 32 words is spare area – Block size: 64 pages – ×8 = 128 KB + 4 KB – ×16 = 64k + 2k words – Plane size: – 1 Gb / 2 Gb: 1024 Blocks per Plane ×8 = 128 MB + 4 MB ×16 = 64M + 2M words – 4 Gb: 2048 blocks per plane ×8 = 256 MB + 8 MB ×16 = 128M + 4M words – Device size: – 1 Gb: 1 Plane per Device or 128 MB – 2 Gb: 2 Planes per Device or 256 MB – 4 Gb: 2 Planes per Device or 512 MB Performance  Page Read / Program – Random access: 25 µs (Max) – Sequential access: 45 ns (Min) – Program time / Multiplane Program time: 250 µs (Typ)  Block Erase (S34MS01G1) – Block Erase time: 2.0 ms (Typ)  Block Erase / Multiplane Erase (S34MS...




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